Power MOSFETs TrenchFET® Gen III with TurboFET™
Breakthrough PWM-Optimized TurboFET Technology Lowers Gate Charge; Industry-lowest rDS(on) x Qgd FOM increases efficiency
Features
- Charge balanced TrenchFET Gen III utilizing TurboFET drain structure technology provides record-breaking gate charge while maintaining excellent on-resistance performance
- On-resistance times gate-drain charge FOM down to 23.2 mΩ-nC at VGS = 4.5 V
- Low switching losses enable high efficiency and low power consumption
- Lower gate charge enables higher frequency operation, allowing the use of smaller passive components in dc-to-dc converters
- Available in thermally advanced PowerPAK® 1212-8 and PowerPAK SO-8 packages
Applications
High-side MOSFET in synchronous buck
- LNotebook Computers
- VRMs
- Servers
- Systems using point-of-load (POL)
TrenchFET® Gen III with TurboFET Technology
SI7784DP High Side Efficiency Comparison (SI7192DP Common Low Side) 12 Vin / 1.3 Vout / 300 kHz
| The Vishay Siliconix TrenchFET® Gen III Power MOSFET
family offers the industry's lowest on-resistance and on-resistance
times gate charge for a device with this voltage rating in the
PowerPAK® SO-8 package type. The Vishay Siliconix TrenchFet Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFet Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. |