TriQuint Semiconductor SAW/BAW Filters
TriQuint Semiconductor's Hermetic SAW/BAW Filters were designed for Base Station applications. SAW/BAW Filters from TriQuint Semiconductor feature low loss, single-end operation, ceramic surface mount packaging (SMP), RoHS compliance (2002/95/EC), and are Pb-free.
TriQuint pHEMT RF Amplifiers & Front Ends
TriQuint pHEMT RF Amplifiers & Front Ends are fabricated using high gain GaAs pHEMT technology to optimize performance and cost. TriQuint pHEMT RF Amplifiers & Front Ends provide excellent gain and return loss consistency inherent to the pHEMT process.
TriQuint High Linearity LNA Gain Block Amplifiers
TriQuint Semiconductor High Linearity LNA Gain Block Amplifiers are cascadable, high linearity gain block amplifiers in low-cost surface-mount packages. TriQuint Semiconductor High Linearity LNA Gain Block Amplifiers have the benefit of having high gain across a broad range of frequencies while also providing very low noise. This allows them to be used in both receiver and transmitter chains for high performance systems. The amplifiers are internally matched using a high performance E-pHEMT process and only require an external RF choke and blocking/bypass capacitors for operation from a single +5V supply. The internal active bias circuit also enables stable operation over bias and temperature variations. At 1.9 GHz, the amplifiers typically provide 22 dB gain, +39.5 dBm OIP3, and 1.3 dB Noise Figure while only drawing 115 mA current. They are housed in leadfree/green/RoHS-compliant industry-standard 16-pin 3x3mm QFN packages. The amplifers cover the 0.05 - 4GHz frequency band and are targeted for wireless infrastructure or other applications requiring high linearity and/or low noise figure.
TriQuint Semiconductor WiFi / WiMAX RF BAW 4G Filters
TriQuint Semiconductor WiFi / WiMAX RF bulk acoustic wave (BAW) 4G filters enable mobile devices to act as portable WLAN (WiFi) hotspots and simultaneously connect directly to 4G WiMAX networks for broadband access up to 10 times faster than conventional 3G systems. TriQuint Semiconductors BAW 4G filters give WLAN handsets, laptops, and similar products fully-mobile, high-speed WiMAX access. Mobile devices using TriQuint BAW filter technology can provide WLAN access for up to 5 connected devices. TriQuint Semiconductor BAW 4G filters are designed for high performance at frequencies greater than 1.5 GHz. BAW technology is particularly adept at solving complex filter challenges such as enabling adjacent bands in the RF spectrum to function at the same time without interference. BAW's ability to provide steep rolloff enables one filter to reject near-in interference while maintaining excellent, low loss performance.
TriQuint Semiconductor TQP4M9072 High Linearity Digital Step Attenuator
The TriQuint Semiconductor TQP4M9072 high linearity digital step attenuator (DSA) operates over the DC-4 GHz frequency range. This TriQuint Semiconductor low-insertion-loss, 6-bit, 31.5 dB DSA uses a single positive 5V supply and has an SPI interface for changing attenuation states. The TQP4M9072 maintains high attenuation accuracy over frequency and temperature. This TriQuint Semiconductor DSA requires no external matching components. The TQP4M9072 also does not require external AC ground capacitors for operation above 700 MHz. Active attenuator evaluation boards are available to assess the performance of the TQP4M9072 DSA.
TriQuint Semiconductor TQP3M9008 / TQP3M9009 High Linearity LNA Gain Block
The TriQuint Semiconductor TQP3M9008 and TQP3M9009 cascadable, high linearity gain block amplifiers are 50-4000 MHz devices in a low-cost surface mount package. The TQP3M9008 1.9 GHz LNA is targeted to provide 20 dB gain, +35.5 dBm OIP3, and 1.3 dB Noise Figure while only drawing 85 mA current. The TQP3M9009 1.9 GHz LNA is targeted to provide 21.8 dB gain, +39.5 dBm OIP3, and 1.3 dB Noise Figure while only drawing 125 mA current. These TriQuint Semiconductor LNA gain block devices have the benefit of high gain across a broad range of frequencies while also providing very low noise. This allows the TQP3M9008 and TQP3M9009 to be used in both receiver and transmitter chains for high performance systems. These TriQuint devices are ideal for use in a wide range of applications, including repeaters, mobile infrastructure, LTE / WCDMA / EDGE / CDMA, and general purpose wireless.
TriQuint Semiconductor ML483-G High IP3 Mixer with Integrated LO Amplifier
The TriQuint Semiconductor ML483-G High IP3 Mixer with Integrated LO Amplifier is a double-balanced IC able to operate across a 0.7-1.0 GHz frequency range to achieve +36 dBm Input IP3 while drawing a very low 50mA current. The TriQuint Semiconductor ML483-G High IP3 Mixer with Integrated LO Amplifier can be used as an upconverter or downconverter in a lowside or high-side LO configuration. A LO buffer amplifier is integrated on the chip to allow for operation directly from a synthesizer requiring only 0 dBm of drive level. The dual-stage LO driver provides a stable input power level into the mixer to allow for consistent performance over a wide range of LO power levels. The TriQuint Semiconductor ML483-G High IP3 Mixer with Integrated LO
Amplifier is optimized for use in repeaters, 2G / 3G / 4G wireless infrastructure, base station transceivers / repeaters, GSM / CDMA / WCDMA / LTE, HPA Feedback Paths, and ISM.
TriQuint Semiconductor POWERBAND™ RF Power Transistors
The TriQuint Semiconductor POWERBAND™ RF Power Transistor
family, named one of the Top Products of 2009 by Microwaves & RF
Magazine, features exceptional instantaneous band-width performance
and increased efficiency for smaller and lighter systems, reduced system
component costs, and reduced energy consumption. The TriQuint
Semiconductor T1L2003028-SP POWERBAND discrete LDMOS enhancement
mode RF Power Transistor is designed to operate from 500MHz to
2GHz in wide-band circuits. The T1L2003028-SP has an
instantaneous band-width P1dB output power of 30 watts across the entire
band when operated in the TriQuint wide-band test fixture. The
T1L2003028-SP can also be used in narrow band applications and is
rated at 45 watts P1dB at 2GHz. The TriQuint Semiconductor
T1P2701012-SP POWERBAND discrete pHEMT depletion mode RF POWER
Transistor is designed to operate from 500MHz to 3GHz in wide-band
circuits. The T1P2701012-SP has an instantaneous band-width P1dB
output power of 10 watts across
the entire band when operated in the TriQuint wide-band test
fixture.
The T1P2701012-SP can also be used in narrow band applications
and is
rated at 15 watts P1dB at 3GHz.
TriQuint-WJ AH322 / AH420 InGaP HBT Amplifier
The TriQuint-WJ AH322 2W High Linearity InGaP HBT Amplifier and AH420 4W High Linearity InGaP HBT Amplifier are high dynamic range amplifiers in a low-cost surface mount package. The AH322 InGaP HBT achieves high performance for various narrowband-tuned application circuits with up to +50 OIP3 and +33.4 dBm of compressed 1dB power. The AH420 InGaP HBT achieves high performance with -49 dBc ACLR and +35.7 dBm of compressed 1dB power, operating off of a single +5V supply. The AH322 amplifier is targeted for use as a driver amplifier in a wireless infrastructure where high linearity and medium power is required. The AH420 amplifier is targeted for use as a final stage amplifier in wireless infrastructure repeaters or as driver stages for high power amplifiers where high performance is required.
TriQuint-WJ ML485 High IP3 Mixer
TriQuint-WJ´s ML485 High IP3 Mixer combines a passive GaAsFET mixer with an integrated LO driver in an ultra-small MSOP-8 package. The double-balanced integrated IC operates across a wide 1.6-3.2 GHz frequency range to achieve +35 dBm Input IP3 and low 40mA current. This TriQuint-WJ device works as an upconverter or downconverter in a low-side or high-side LO configuration and integrates a LO buffer amplifier
to allow for operation directly from a synthesize requiring only 0 dBm
of drive level. The product is optimized for use in frequency up/down
conversion, modulation, and demodulation for receivers and transmitters
used in 2.5G and 3G mobile infrastructure.