Texas Instruments NexFET Power MOSFETs
Complementary Technologies

The Texas Instruments N-Channel NexFETPower MOSFET series combines vertical current flow with a lateral power MOSFET and features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90% power supply efficiencies from light to full loads with high output currents and low duty cycles.




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TI NexFET Features
TI NexFET Applications
  • Ultra Low Qg & Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead Free Terminal Plating
  • RoHS Compliant
  • Halogen Free

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom & Computing Systems
  • Optimized for Synchronous FET Applications


TI NexFET Block Diagram


TI NexFET Electrical Characteristics


Device


Channel


Vds


Vgs
Typ.
RDs(on)(mΩ)
@10V
Typ.
RDs(on)(mΩ)
@10V

Typ. Qg @
4.5V (nC)

Typ. (nC)
Qgd
CSD16413Q5A
N
25
16
9.0
13.0
9.0
2.5
CSD16406Q3
N
25
16
4.2
5.9
5.8
1.5
CSD16404Q5A
N
25
16
4.1
5.7
6.5
1.7
CSD16403Q5A
N
25
16
2.2
2.9
13.3
3.5
CSD16410Q5A
N
25
16
6.8
9.6
3.9
1.1
CSD16401Q5N
25
16 1.3
1.8
21.0
5.2
CSD16411Q3N25
16
8
12
2.9
0.7
CSD16409Q3N2516 6.2
9.5
4.0
1.0
CSD16414Q5N2516
1.5
2.1
16.6
4.4
CSD16412Q5AN25
16
9.0
13.0
2.80.7