STMicroelectronics Power MOSFETsSTMicroelectronics offers a variety of new high-performance N-channel power MOSFETs. The STmicroelectronics STD8N65M5 and STP8N65M5 are N-channel 650V, 0.56Ω, 7A MDmesh™ V power MOSFETs. The STD8N65M5 comes in a DPAK package while the STP8N65M5 comes in a TO-220. The STL17N3LLH6 is an N-channel 30V, 17A STripFET™ VI DeepGATE power MOSFET that exhibits the lowest on-resistance in a standard package. The STMicroelectronics STL85N6F3 N-channel, 60V STripFET™ 2 power MOSFET shows extremely high packing density for low on resistance, rugged avalanche characteristics, and low gate charge. The STP34NM60N N-channel second generation MDmesh MOSFET features low input capacitance and gate charge, making it suitable for the most demanding high efficiency converters.
STD8N65M5/STP8N65M5 Features
- Worldwide best RDS(on) * area
- Higher VDSS rating
- High dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
STL17N3LLH6 Features
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge
| STP34NM60N Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
STL85N6F3 Features
- Extremely low on-resistance RDS(on)
- 100% avalanche tested
Applications
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