Spansion
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Spansion is the world's largest company exclusively focused on Flash memory solutions. Spansion's MirrorBit® technology enables cost-effective and added-value Flash memory solutions optimized for code execution and data storage. The company also provides total Flash memory solutions incorporating software, hardware, packaging, and third-party silicon compatibility as well as innovative new solutions combining logic and MirrorBit Flash memory on a single chip.
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Spansion S34ML0xG1 SLC NAND Flash Memory - EXPANSION
Spansion's expanded S34ML0xG1 SLC NAND Flash Memory now includes an 8Gb version of their single-level cell (SLC) Spansion® NAND products using 4x nm
floating-gate technology, targeted specifically for data storage in
automotive, consumer and networking applications.
Spansion's S34ML0xG1 SLC NAND Flash Memory is the first family of
single-level cell (SLC) Spansion® NAND products using 4x nm
floating-gate technology, targeted specifically for data storage in
automotive, consumer and networking applications. Spansion SLC NAND will
be offered in densities from 1 Gb to 8 Gb in 3.0V and 1.8V families
that feature high performance, extended temperature range, long-term
product support and stringent reliability demands, such as 1-bit error
correction code (ECC). Spansion's NAND cell provides the most
cost-effective solution for the solid state mass storage market. The
memory is divided into blocks that can be erased independently so it is
possible to preserve valid data while old data is erased.
View the entire Spansion S34ML0xG1 SLC NAND Flash Memory family
Spansion S29WS128P0SBFW000 MirrorBit® Flash
Spansion S29WS128P0SBFW000 MirrorBit® Flash is a burst mode Flash device capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These Spansion devices can operate up to 104 MHz and use a single VCC of 1.7V to 1.95V that makes them ideal for wireless applications that require higher density, better performance, and lower power consumption. S29WS128P0SBFW000 is fabriacated on 90nm process technology.
Spansion S29PL032J70BFI120 Flash Memory with Enhanced VersatileIO™ Control
Spansion S29PL032J70BFI120 Flash Memory with Enhanced VersatileIO™ Control is a 32Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8/8/4/2 Mwords. This Spansion memory device can be programmed in-system or in standard EPROM programmers. A 12.0V V<sub>PP</sub> is not required for write or erase operations. The device offers fast page access times of 20 to 30ns, with corresponding random access times of 55 to 70ns, respectively, allowing high speed microprocessors to operate without wait states.
Spansion S25FL2xxK Series Serial Flash Memory
Spansion's S25FL2xxK Series Serial Flash Memory offers advanced write protection mechanisms. These devices support the standard Serial Peripheral Interface (SPI), and a high performance Dual output using SPI pins: Serial Clock, Chip Select, Serial SI/IO0, SO, WP# and HOLD#. SPI clock frequencies of up to 85 MHz are supported along with a clock rate of up to 85 MHz for Dual Output Read. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4 kB Sector Erase), groups of 256 (64 kB Block Erase) or the entire chip (Chip Erase). The small 4 kB sectors allow for greater flexibility in applications that require data and parameter storage.
Spansion S34ML0xG1 SLC NAND Flash Memory
Spansion's S34ML0xG1 SLC NAND Flash Memory is the first family of single-level cell (SLC) Spansion® NAND products using 4x nm floating-gate technology, targeted specifically for data storage in automotive, consumer and networking applications. Spansion SLC NAND will be offered in densities from 1 Gb to 8 Gb in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support and stringent reliability demands, such as 1-bit error correction code (ECC). Spansion's NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Spansion has expanded the S34ML0xG1 SLC NAND Flash Memory familiy to include an 8 Gb version! View the S34ML0xG1 SLC NAND 8 Gb Flash Memory
Spansion S25FL512S FL-S NOR Flash Memory Devices
The Spansion S25FL512S FL-S NOR is a VIO = VCC = 2.7V to 3.6V Flash
non-volatile Memory Device using 65 nm MirrorBit technology. Designed
using Eclipse architecture with a 512-byte Page Programming Buffer, the
512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512
bytes) in one operation, resulting in faster effective programming and
erase than prior generation SPI program or erase algorithms. The device
connects to a host system via a Serial Peripheral Interface (SPI) and
supports traditional SPI single bit serial input and output (Single I/O
or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or
QIO) serial commands. As part of the FL-S family, S25FL512S FL-S NOR
provides support for Double Data Rate (DDR) read commands for SIO, DIO,
and QIO that transfer address and read data on both edges of the clock.
Using FL-S devices at the supported higher clock rates with QIO or
DDR-QIO commands, the instruction read transfer rate can match or exceed
traditional parallel interface, asynchronous, NOR flash memories while
reducing signal count dramatically. S25FL512S FL-S NOR offers high
density performance capabilities coupled with the flexibility and speed
required by a variety of embedded applications. Spansion S25FL512S FL-S
NOR is ideal for code shadowing, XIP, and data storage.
Spansion S25FL256S FL-S NOR Flash Memory Devices
The Spansion S25FL256S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65 nm MirrorBit technology. Featuring the Eclipse architecture with a Page Programming Buffer, 256-Mb S25FL256S FL-S NOR allows users to program up to 256 words (512 bytes) to in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL256S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL256S FL-S NOR offers high density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FL256S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Spansion S25FL128S NOR Flash Memory Devices
The Spansion S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65 nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Spansion S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Spansion S29GL-N Parallel NOR Flash
The Spansion S29GL-N Parallel NOR Flash family of devices are 3.0-Volt single-power flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N Parallel NOR Flash is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032N Parallel NOR Flash is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The Spansion S29GL-N Parallel NOR Flash can be programmed either in the host system or in standard EPROM programmers.
Spansion NOR JL Flash Memory Devices EXPANSION
Spansion's expanded its line of NOR JL Flash Memory Devices family to include densities of 32Mb and 64Mb. Each of these NOR JL Flash Memory Devices requires only a single 3V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Spansion NOR JL Flash Memory Devices family is capable of performing simultaneous read and write operations with zero latency on two or four separate banks and features a x8 and x16 data bus.
The Spansion NOR JL family Flash memory device delivers simultaneous read/write operation with densities of 32Mb and 64Mb. The NOR JL device features parallel NOR Flash memory, 55 ns - 60 ns access, simultaneous read/write, page-mode interface, and boot sector architecture. This Spansion device offers package options of BGA and TSOP.
View the entire NOR JL Flash Memory Devices Family
Spansion MirrorBit® NOR GL Flash Memory Device
Spansion MirrorBit® GL NOR Flash family is optimized for the voltage, density,
cost-per-bit, reliability, performance and scalability needs of a wide variety
of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires
only a single 3.0V power supply for read and write functions and is entirely
command set compatible with the JEDEC Flash standards. The Spansion MirrorBit® GL Flash Memory Device family
supports Spansion's Universal Footprint, which provides one footprint across all
densities, product families and process technologies, allowing manufacturers to
design a single platform and simply scale Flash memory capacity up or down,
depending on the features and functionality of the target end system.
Spansion has expanded its line of MirrorBit® GL NOR Flash family to to include the 100 ns access speeds and 128MB and 256MB densities. This additional offering of Spansion MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high density versions available.
View the new offering of MirrorBit™ GL NOR Flash
Spansion MirrorBit® SPI Flash Memory Device
The Spansion MirrorBit® FL family SPI Flash memory device features a serial interface in densities ranging from 4 Mb to 128 Mb. The Mirrorbit FL SPI Flash transfers data one bit at a time instead of sending 8, 16, or 32 bits in parallel. This enables solutions to have fewer connections and pins per package for more simplified designs and lower costs. Other key features of this Spansion device include 50 MHz clock speed (104 MHz for 128 Mb), 1.5 ms/page programming time, low power operation with Deep Power Down mode (1.5 µA), and hardware/software write protect.
Spansion NOR JL Flash Memory Devices
The Spansion NOR JL family Flash memory device delivers simultaneous read/write operation with densities of 32Mb and 64Mb. The NOR JL device features parallel NOR Flash memory, 55ns - 60ns access, simultaneous read/write. page-mode interface, and boot sector architecture. This Spansion device offers package options of BGA and TSOP.
Spansion has expanded its line of NOR JL Flash Memory Devices to include densities of 32Mb and 64Mb. Each of these NOR JL Flash Memory Devices requires only a single 3V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Spansion NOR JL Flash Memory Devices
family is capable of performing simultaneous read and write operations
with zero latency on two or four separate banks and features a x8 and
x16 data bus.
View the new JL Flash Memory Devices