Vishay Siliconix Power MOSFETs
Vishay Siliconix MOSFETs are industry leading low-to-high power MOSFETs that meet the increasing demands of today's applications in growth markets.
Vishay Siliconix IRFPS43N50K Power MOSFETs
Vishay Siliconix IRFPS43N50K Power MOSFETs feature low gate charge Qg and improved gate, avalanche, and dynamic dV/dt ruggedness compared to similar n-channel power MOSFETs. Vishay Siliconix IRFPS43N50K MOSFETs offer low RDS(on) and fully characterized capacitance and avalanche voltage and current. The Vishay Siliconix IRFPS43N50K is optimized for switch mode power supply, uninterruptible power supply, and high-speed power switching applications.
Vishay Siliconix SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulsewidth modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.
Vishay Siliconix SiZ730DT PowerPAIR® Dual Power MOSFETs
Vishay Siliconix SiZ730DT PowerPAIR® Dual Power MOSFETs feature high- and low-side MOSFETs combined in one compact 6mm x 3.7mm package. The Vishay Siliconix SiZ730DT comes in a package one third smaller than two discrete PowerPAK® 1212-8 packages or two thirds smaller than two discrete SO-8 packages. Optimized asymmetric design provides on-resistance over 30% lower than using a PowerPAK 1212-8 for the low side. These PowerPAIR dual power MOSFETs reduce package count and save space with a pin arrangement that
simplifies layout. Reduced parasitic inductance increases efficiency and reduces ringing. The Vishay Siliconix SiZ730DT is designed for use in system power, POL low-current DC/DC, and synchronous buck applications in notebooks, VRMs, power modules, graphics cards, servers, and gaming consoles.
Vishay Siliconix DG9454 Triple SPDT Analog Switches
Vishay Siliconix DG9454 Triple SPDT 12V analog switches are compact devices for 3D shutter glasses. The Vishay Siliconix DG9454 guarantees 1.8V logic compatibility over an operational range from 2.7V to 13.2V at V+ and 2.5V to +5.5V at VL and features low power consumption down to <1µA to greatly enhance battery life. DG9454 Triple SPDT analog switches meet the demand for lower microcontroller (MCU) voltage designs by guaranteeing <1.8V logic compatibility while maintaining low power consumption. These Vishay Siliconix analog switches are available in the ultra-compact 1.8mm x 2.6mm miniQFN-16 package, enabling smaller and lighter 3D goggles for end users. The DG9454 offers high bandwidth to 540MHz, low charge injection over the full signal range of <0.9pQ, low switch capacitance of 2pF typical, and isolation and crosstalk performance of -65dB at 10MHz and <-90dB at 100KHz. These specifications make the device a high-performance switch for data acquisition applications as well as healthcare and control and automation equipment.
Vishay Siliconix SiR804DP 100V N-Channel MOSFETs
Vishay Siliconix SiR804DP 100V n-channel devices are TrenchFET® power MOSFETs in a PowerPAK® SO-8 package. Vishay Siliconix SiR804DP 100V n-channel power MOSFETs feature low on-resistance of 0.0072Ω at 10V, 0.0078Ω at 7.5V, and 0.0103 at 4.5V. Vishay Siliconix SiR804DP TrenchFET power MOSFETs are designed for use in fixed telecom, DC/DC converter, and primary side switch applications.
Vishay Siliconix SiA427DJ 8V P-Channel TrenchFET® Power MOSFETs
Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more.
Vishay Siliconix SiA923EDJ Dual 20V TrenchFET® Gen III Power MOSFETs
Vishay Siliconix SiA923EDJ dual 20V p-channel TrenchFET® Gen III power MOSFETs with an 8V gate-to-source voltage feature the lowest on-resistance for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. Vishay Siliconix SiA923EDJ TrenchFET Gen III power MOSFETs are designed for use in DC-to-DC converters as well as load switches in handheld devices, such as smartphones, MP3 players, table PCs, and eBooks. The lower on-resistance of the SiA923EDJ translates into lower conduction losses, saving power and prolonging battery life between charges. The on-resistance ratings down to 1.5V allow SiA923EDJ power MOSFETs to work with the lower-voltage gate drives and lower bus voltages common in handheld devices without the space and cost of level-shifting circuitry. The ultra-low on-resistance of this Vishay Siliconix power MOSFET is up to 12% lower than the closest competing p-channel device.
Vishay Siliconix SiA429DJT 20V P-Channel TrenchFET® MOSFETs
Vishay Siliconix SiA429DJT 20V P-Channel TrenchFET® Power MOSFETs offer the industry's lowest on-resistance for a P-Channel device with a sub-0.8mm profile and the lowest on-resistance for all 2mm by 2mm P-Channel devices. Vishay Siliconix SiA429DJT TrenchFET Power MOSFETs come in a thermally enhanced Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA429DJT is ideal for DC/DC converters and load and charger switches. The on-resistance of SiA429DJT TrenchFET MOSFETs at 1.8V is 12% lower than the closest competing device, including MOSFETs with the standard 0.8 mm profile. The lower on-resistance translates into lower conduction losses.
Vishay Siliconix SiA444DJT 30V N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix SiA444DJT 30V N-Channel TrenchFET® power MOSFETs feature the industry's lowest height for an N-Channel MOSFET in the 2mm by 2mm footprint area. Vishay Siliconix SiA444DJT TrenchFET power MOSFETs come in a Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA444DJT is 13% thinner than the next thinnest 2mm by 2mm device and 19% thinner than the standard 0.8mm height. It offers low on-resistance and the industry's lowest on-resistance times gather charge for 2mm by 2mm power MOSFETs. These TrenchFET power MOSFETs are ideal for use in DC/DC converter and high frequency switching applications.
Vishay Siliconix Si4190DY ThunderFET® 100V Power MOSFETs
Vishay Siliconix Si4190DY ThunderFET® power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. The Vishay Siliconix Si4190DY provides on-resistance of 8.8mΩ at 10V and 12mΩ at 4.5V. These ThunderFET power MOSFETs have an industry-best figure of merit (FOM) of 340mΩ-nC at 10V and 220mΩ-nC at 4.5V. The Vishay Siliconix Si4190DY is a TrenchFET® device optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications.
Vishay Siliconix SiR870DP ThunderFET® 100V Power MOSFETs
Vishay Siliconix SiR870DP 100V N-channel TrenchFET® power MOSFETs use ThunderFET® technology to provide the industry's lowest on-resistance of 7.8mΩ at 4.5V. The Vishay Siliconix SiR870DP also offers a very low on-resistance of 6mΩ at 10V. These Vishay Siliconix ThunderFET devices also provide an industry-low 208 mΩ-nC figure of merit (FOM) at 4.5V. The low on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. SiR870DP 100V TrenchFET power MOSFETs are designed for higher frequency and switching applications.
Vishay Siliconix SiP324xx Series Slew Rate Controlled Load Switches
Vishay Siliconix SiP324xx Series Load Switches are slew rate controlled load switches designed with low switch on-resistance. Vishay Siliconix SiP324xx Series Slew Rate Controlled Load Switches have a low voltage control logic interface (On/Off interface). The SiP32411 is designed for 1.1 V to 5.5 V operation and features a controlled soft-on slew rate that limits the inrush current for designs of capacitive load or noise sensitive loads. It also integrates an output discharge switch that enables fast shutdown load discharge. When the switch is off, it provides reverse blocking to prevent high current flowing into the power source. The SiP32411DN is in a TDFN4 package of 1.2 mm by 1.6 mm, and the SiP32411DR is in a SC70-6 package. The SiP32431 is a high side switch with reverse blocking capability which operates with an input voltage from 1.5 V to 5.5 V and has a very low operating current. The SiP32431 is available in lead (Pb)-free package options including 6 pin SC70-6, and 4 pin TDFN4 1.2 mm x 1.6 mm packages. The SiP32431 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications.
Vishay Siliconix SiHG47N60S N-Channel Power MOSFETs
The Vishay Siliconix SiHG47N60S 47 A, N-channel power MOSFET features the industry's lowest gate charge times on-resistance figure of merit (FOM). The Vishay Siliconix SiHG47N60S features a 15.12 Ω-nC gate charge times on-resistance. The Vishay Siliconix SiHG47N60S also provides ultra-low maximum on-resistance of 0.07 Ω at a 10 V gate drive. This Vishay Siliconix device is produced using Vishay Super Junction technology and is tailored to minimize on-state resistance and withstand high energy pulse in avalanche and commutation mode. Vishay Siliconix SiHG47N60S power MOSFETs are ideal for use in a variety of applications, including inverter circuits and PWM full-bridge topologies in solar and wind inverters. They are also optimized for telecom, server, and motor-control power applications.
Vishay Siliconix SiHx16N50C 500-V N-Channel Power MOSFETs
Vishay Siliconix SiHx16N50C 500-V, 16-A N-channel power MOSFETS feature ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive and an improved gate charge of 68nC. The low on-resistance of the Vishay Siliconix SiHP16N50C (TO-220AB package), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC) MOSFETs translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, PWM half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies. Gate charges times on-resistance is a low 25.84 Ω-nC. Vishay Siliconix SiHx16N50C N-channel power MOSFETs are produced using Vishay Planar Cell technology that has been tailored to minimize on-state resistance and withstand high energy pulse in the avalanche and commutation modes. The SiHP16N50C, SiHF16N50C, SiHB16N50C, and SiHG16N50C also offer faster switching speeds and reduced switching losses than previous-generation MOSFETs.
Vishay Siliconix TrenchFET® Gen III P-Channel MOSFETs
Vishay Siliconix TrenchFET® Gen III P-Channel MOSFETs feature the newest generation of p-channel silicon technology, enabling these devices to provide industry-best on-resistance specifications, such as 1.9 milliohms in the PowerPAK® SO-8. With on-resistance as low as half the level of the next best devices on the market, Vishay Siliconix TrenchFET Gen III P-Channel power MOSFETs provide lower conduction losses for higher efficiency and longer time between charges for battery-operated applications. These Vishay Siliconix devices offer a full range of package options, including the 1.6-mm by 1.6-mm PowerPAK® SC-75. The new 20V SiA433EDJ TrenchFET Gen III P-Channel MOSFET provides the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The SiA433EDJ is the only 20-V MOSFET with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.