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Vishay / Siliconix power MOSFET transistors and integrated circuits (ICs) are used to manage and convert power in computers, cell phones, and the communications infrastructure, as well as to control motion in computer disk drives and automotive systems. Vishay / Siliconix analog switching ICs are used to sense, switch, and route analog signals in instrumentation and a wide array of industrial products.
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Vishay Siliconix DG141x Precision Quad SPST Analog Switches are monolithic quad analog switches that are designed to provide high speed, low error switching of precision analog signals. Combining low power (0.033μW) with high speed (tON: 100ns), the DG141x family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG141x series was built on Vishay Siliconix's newest high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off.
Vishay Siliconix's SiP3246x Slew Rate Controlled Load Switches are slew
rate controlled integrated high side load switches that operate in the
input voltage range from 1.2V to 5.5V. This series features slew rate
control, reverse blocking, output discharge, and control logic pull
down. These devices are logic high enabled. They are ideal for smart
phones, GPS, portable media players, tablet computers, medical and
healthcare equipment, industrial and instruments, and game console
Vishay Siliconix's SiP3245x High-Side Load Switches are n-channel integrated high side load switches that operate from 0.9V to 2.5V input voltage range. The SiP3245x have low input logic control threshold that can interface with low voltage control GPIO directly without extra level shift or driver. There is a pull down at this EN logic control pin. Turn on time is fast, less than 25μs typically for input voltage of 1.2V or higher. SiP32451 and SiP32452 have fast turn off delay time of less than 1μs while SiP32453 features a guaranteed turn off delay of greater than 30μs, typically 90μs.
Vishay Siliconix's EF Series High Performance MOSFETs are 600V super junction N-Channel power MOSFETs with a 30% reduction in specific On-Resistance versus the S Series MOSFETs. These feature a fast body diode MOSFET, using E Series technology, reduced Trr / Qrr / Irrm, low FOM, low input capacitance, low switching losses due to reduced Qrr, ultra low gate charge and are Avalanche Energy Rated (UIS). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy and SMPS.
Vishay Siliconix's SiP32458/59 Slew Rate Controlled Load Switches are slew rate controlled integrated high side load switches that operate in the input voltage range from 1.5V to 5.5V. The SiP32458/59 are made of a P-channel MOSFET switching element with integrated gate pump that provides 20mΩ switch on resistance over a wide input voltage range. These devices have low voltage logic control threshold that can interface with low voltage control I/O directly without extra level shift or driver. A 2.8 MΩ pull-down resistor is integrated at logic control EN pin. The slow slew rate of the SiP32458/59 is in the range of 3ms limits the in-rush current and minimizes the switching noise. The SiP32458 features a reverse current blocking capability while the SiP32459 features an integrated output discharge switch.
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in an ultra-small (down to 1mm x 1mm) and ultra-thin (down to 0.548mm) package. These device's compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices’ low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.
Vishay Siliconix's SiC7xx Integrated DrMOS Power Stages are an integrated power stage solution optimized for synchronous buck applications offering high current, high efficiency and high power density. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The internal Power MOSFETs utilize Vishay’s state-of-the-art TrenchFET Gen III technology that delivers industry bench-mark performance by significantly reducing switching and conduction losses. They incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, and a thermal warning (THDN) that alerts the system of excessive junction temperature.
Vishay Siliconix's SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in the compact PowerPAK SC-70 package, and is designed to save valuable PCB space in portable electronics. This MOSFET's on-resistance values are 18 % lower than previous generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2 mm by 2 mm footprint area. This ultra-low on resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ's on resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Vishay Siliconix TrenchFET® Gen IV N-Channel MOSFETs are Vishay's next-generation TrenchFET® family of 30 V N-Channel power MOSFETs. These new devices utilize a new high-density design and the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35mΩ at 4.5 V and low total gate charge in the PowerPAK® SO-8 and 1212-8 packages. Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption, very low Qdg/Qgs ratio of 0.5 or less, space saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, synchronous buck converters and OR-ing.
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure of merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
View entire Vishay Siliconix Power MOSFET line
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