Vishay / Siliconix power MOSFET transistors and integrated circuits (ICs) are used to manage and convert power in computers, cell phones, and the communications infrastructure, as well as to control motion in computer disk drives and automotive systems. Vishay / Siliconix analog switching ICs are used to sense, switch, and route analog signals in instrumentation and a wide array of industrial products.
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For more than 40 years, Vishay / Siliconix analog switches and multiplexers have been providing benchmark performance in an astonishing array of end products. To meet specific application requirements, the devices are offered in a number of package options, including the TSOP, SOIC, miniQFN, MICRO FOOT®, and more. Vishay / Siliconix analog switches and multiplexers provide a choice of single and dual supply operation. On-resistance values range from sub-ohmic to 10 Ω and above. Configurations include SPST, SPDT, DPST, DPDT, and bus switches, along with 2:1, 4:1, 8:1, and 16:1 multiplexers, including differential.
Vishay Siliconix's SiC7xx Integrated DrMOS Power Stages are an integrated power stage solution optimized for synchronous buck applications offering high current, high efficiency and high power density. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The internal Power MOSFETs utilize Vishay’s state-of-the-art TrenchFET Gen III technology that delivers industry bench-mark performance by significantly reducing switching and conduction losses. They incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, and a thermal warning (THDN) that alerts the system of excessive junction temperature.
Vishay Siliconix's SiC4xx microBUCK™ Integrated Buck Regulators are a family of products that leverage Vishay's unique combination of discrete MOSFET design, IC expertise, and packaging capability to provide customers with cost-effective, high-performance integrated solutions. The resulting integrated solutions deliver a significant reduction in board space requirements. This benefits the designer by giving more space for critical system functionality. Typical applications include notebook, desktop, and server computers, digital HDTV, digital consumer applications, printers, DSL, and STB applications, embedded applications and point of load power supplies.
Vishay Siliconix's SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in the compact PowerPAK SC-70 package, and is designed to save valuable PCB space in portable electronics. This MOSFET's on-resistance values are 18 % lower than previous generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2 mm by 2 mm footprint area. This ultra-low on resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ's on resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.
Vishay Siliconix's SiA445EDJ is a P-Channel TrenchFET® Power MOSFET featuring Thermally Enhanced PowerPAK®. Designed using the SC-70 package with a footprint area of 2.05mm by 2.05mm, SiA445EDJ is 50% smaller than TSOP-6 devices. The slim 0.6 mm profile makes SiA445EDJ 40% smaller than TSOP-6 devices. SiA445EDJ offers low on-resistance compared to N-channel down to 11 mΩ and P-channel down to 16 mΩ. In addition, SiA445EDJ provides 75% higher maximum power dissipation than devices with on-resistance ratings down to 1.2 V. A zener diode provides built-in ESD protection with 2000V typical EDS performance. Available in the SC-70 package and 100% Rg tested, SiA445EDJ is well-suited for load, battery, and charger switching in handheld devices including smart phones, tablet PC, and mobile computing.
Vishay Siliconix's SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET.
SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low
on-resistance of 0.00165 Ohms and 60 A continuous drain current.
Available in the PowerPAK SO-8 package and 100% Rg and UIS tested,
SiR812DP is well-suited for motor control, industrial, load switch, and
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC/DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Vishay Siliconix TrenchFET® Gen IV N-Channel MOSFETs are Vishay's next-generation TrenchFET® family of 30 V N-Channel power MOSFETs. These new devices utilize a new high-density design and the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35mΩ at 4.5 V and low total gate charge in the PowerPAK® SO-8 and 1212-8 packages. Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption, very low Qdg/Qgs ratio of 0.5 or less, space saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, synchronous buck converters and OR-ing.
Vishay Siliconix's Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs set new benchmarks for size and on-resistance. The new Si8497DB is the industry's first 30V chipscale MOSFET in the compact 1 mm by 1.5 mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30V chipscale device in the 1.6 mm by 1.6 mm form factor. Vishay's TrenchFET Gen III P-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. The Si8497DB and Si8487DB will be used for load, battery, and charger switching in handheld devices including smart phones, tablets, point-of-sale (POS) devices, and mobile computing.View entire Vishay Siliconix Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure of merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
View entire Vishay Siliconix Power MOSFET line
Vishay Siliconix's SiSA04DN N-Channel 30V (D-S) MOSFET is a TrenchFET® Gen IV Power MOSFET that is 100% Rg and UIS tested. In addition, the SiSA04DN N-Channel MOSFET from Vishay Siliconix is halogen-free according to IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.
Vishay Siliconix's SiP12107 Buck Regulator is a high frequency current-mode constant on-time (CM-COT) synchronous device with integrated high-side and low-side power MOSFETs. The SiP12107 from Vishay Siliconix is capable of supplying 3A continuous output at 4MHz switching frequency and produces an adjustable output voltage down to 0.6V from 2.8V to 5.5V input rail to accommodate a variety of applications. In addition, the SiP12107's architecture delivers ultra-fast transient response with minimum output capacitance and tight ripple regulation at very light load. This component is available in a lead(Pb)-free, power enhanced MLP-16L package in 3mm x 3mm dimension and offers 95% efficiency and 1% accuracy.
Vishay Siliconix SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET features the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET is the only such device to offer an on-resistance rating (RDS(on)) down to 1.2 V. Vishay Siliconix's SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET can be used for load switching in handheld devices such as smart phones, MP3 players, portable media players, digital cameras, eBooks, and tablet PCs. The compact footprint and ultra-thin 0.65 mm maximum profile of the SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET's thermally enhanced Thin PowerPAK® SC-75 package enables smaller, slimmer end products, while its low on-resistance translates into lower conduction losses, saving power and maximizing battery run times in these devices.
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.
Vishay Siliconix's SiP324x Slew Rate Controlled Load Switches are designed for 1.1V to 5.5V operation. The SiP324x Slew Rate Controlled Load Switches guarantee low switch on-resistance at 1.2V input. Vishay Siliconix's SiP324x Slew Rate Controlled Load Switches feature a controlled soft-on slew rate of typical 150 μs that limits the inrush current for designs of capacitive load or noise sensitive loads. These SiP324x Slew Rate Controlled Load Switches feature a low voltage control logic interface (On/Off interface) that can interface with low voltage digital control without extra level shifting circuit. They can also support over 2A of continuous current.
Vishay Siliconix Power MOSFETs are industry leading low-to-high power MOSFETs that meet the increasing demands of today's applications in growth markets, such as alternative energy, telecom dc-dc, tablet, portable, automotive, and smart grid. Vishay offers numerous families to address these needs and includes the E Series, ThunderFET®, TrenchFET® III, PowerPair, MICROFOOT®, PPAK SC70, ChipFET, and the SQ Series.
Vishay Siliconix's Si7703EDN P-Channel TrenchFET® Power MOSFET is a Single Channel P-Channel MOSFET offered in a low 1.07 mm profile package with ultra-low thermal resistance. The Si7703EDN P-Channel TrenchFET® Power MOSFET is part of the popular TrenchFET® Power MOSFETs that are rated down to 1.8 V and it is ESD protected up to 4500 V. Vishay Siliconix's Si7703EDN P-Channel TrenchFET® Power MOSFET comes with a drain-source voltage (VDS) of -20 V and a drain-source on resistance (RDS(on)) of 0.048 Ω (@ VGS = 4.5 V, ID = -6.3 A).View Vishay Super 12 Products
Vishay Siliconix SiC779 Integrated DrMOS Power Stage is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The Vishay Siliconix SiC779 complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC779 Integrated DrMOS Power Stage delivers up to 40A continuous output current and operates from an input voltage range of 3V to 16V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8V to 2.0V with a nominal input voltage of 12V. The device can also deliver very high power at 5V output for ASIC applications. The Vishay Siliconix SiC779 is optimized for high frequency buck applications. Operating frequencies in excess of 1MHz can easily be achieved.
Vishay Siliconix SQM120N04-1m7L is a TrenchFET® Power MOSFET intended for automotive applications. Vishay Siliconix SQM120N04-1m7L 40V N-Channel MOSFET comes in a TO-263 package with low thermal resistance. This Vishay Siliconix automotive grade Power MOSFET features 120A continuous drain current and an operating junction temperature range of -55 to +175ºC.
Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.
Vishay Siliconix IRFPS43N50K Power MOSFETs feature low gate charge Qg and improved gate, avalanche, and dynamic dV/dt ruggedness compared to similar n-channel power MOSFETs. Vishay Siliconix IRFPS43N50K MOSFETs offer low RDS(on) and fully characterized capacitance and avalanche voltage and current. The Vishay Siliconix IRFPS43N50K is optimized for switch mode power supply, uninterruptible power supply, and high-speed power switching applications.
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.
Vishay Siliconix SiZ730DT PowerPAIR® Dual Power MOSFETs feature high- and low-side MOSFETs combined in one compact 6mm x 3.7mm package. The Vishay Siliconix SiZ730DT comes in a package one third smaller than two discrete PowerPAK® 1212-8 packages or two thirds smaller than two discrete SO-8 packages. Optimized asymmetric design provides on-resistance over 30% lower than using a PowerPAK 1212-8 for the low side. These PowerPAIR dual power MOSFETs reduce package count and save space with a pin arrangement that simplifies layout. Reduced parasitic inductance increases efficiency and reduces ringing. The Vishay Siliconix SiZ730DT is designed for use in system power, POL low-current DC/DC, and synchronous buck applications in notebooks, VRMs, power modules, graphics cards, servers, and gaming consoles.View entire Vishay Siliconix Power MOSFET line
Vishay Siliconix SiR662DP 60V n-channel TrenchFET® Power MOSFETs provide industry-leading on-resistance values up to 27% lower than the next closest competing device. Vishay Siliconix SiR662DP TrenchFET Power MOSFETs also offer the industry's best on-resistance times gate charge figure of merit (FOM) that is up to 57% better than the closest competing device. SiR662DP TrenchFET Power MOSFETs provide lower conduction losses while also lowering switching losses, especially at higher frequency. Vishay Siliconix SiR640DP 40V n-channel TrenchFET Power MOSFETs offer on-resistance values up to 4% lower than the next best competing device while its FOM is up to 15% lower. Both devices are designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications.
Vishay Siliconix DG9454 Triple SPDT 12V analog switches are compact devices for 3D shutter glasses. The Vishay Siliconix DG9454 guarantees 1.8V logic compatibility over an operational range from 2.7V to 13.2V at V+ and 2.5V to +5.5V at VL and features low power consumption down to <1µA to greatly enhance battery life. DG9454 Triple SPDT analog switches meet the demand for lower microcontroller (MCU) voltage designs by guaranteeing <1.8V logic compatibility while maintaining low power consumption. These Vishay Siliconix analog switches are available in the ultra-compact 1.8mm x 2.6mm miniQFN-16 package, enabling smaller and lighter 3D goggles for end users. The DG9454 offers high bandwidth to 540MHz, low charge injection over the full signal range of <0.9pQ, low switch capacitance of 2pF typical, and isolation and crosstalk performance of -65dB at 10MHz and <-90dB at 100KHz. These specifications make the device a high-performance switch for data acquisition applications as well as healthcare and control and automation equipment.
Vishay Siliconix SiR804DP 100V N-Channel devices are TrenchFET® Power MOSFETs in a PowerPAK® SO-8 package. Vishay Siliconix SiR804DP 100V N-Channel Power MOSFETs feature low on-resistance of 0.0072Ω at 10V, 0.0078Ω at 7.5V, and 0.0103 at 4.5V. Vishay Siliconix SiR804DP TrenchFET® Power MOSFETs are designed for use in fixed telecom, DC/DC converter, and primary side switch applications.
Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more. View entire Vishay Siliconix Power MOSFET line
Vishay Siliconix SiA923EDJ dual 20V p-channel TrenchFET® Gen III power MOSFETs with an 8V gate-to-source voltage feature the lowest on-resistance for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. Vishay Siliconix SiA923EDJ TrenchFET Gen III power MOSFETs are designed for use in DC-to-DC converters as well as load switches in handheld devices, such as smartphones, MP3 players, table PCs, and eBooks. The lower on-resistance of the SiA923EDJ translates into lower conduction losses, saving power and prolonging battery life between charges. The on-resistance ratings down to 1.5V allow SiA923EDJ power MOSFETs to work with the lower-voltage gate drives and lower bus voltages common in handheld devices without the space and cost of level-shifting circuitry. The ultra-low on-resistance of this Vishay Siliconix power MOSFET is up to 12% lower than the closest competing p-channel device. View entire Vishay Siliconix Power MOSFET line
Vishay Siliconix SiA429DJT 20V P-Channel TrenchFET® Power MOSFETs offer the industry's lowest on-resistance for a P-Channel device with a sub-0.8mm profile and the lowest on-resistance for all 2mm by 2mm P-Channel devices. Vishay Siliconix SiA429DJT TrenchFET Power MOSFETs come in a thermally enhanced Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA429DJT is ideal for DC/DC converters and load and charger switches. The on-resistance of SiA429DJT TrenchFET MOSFETs at 1.8V is 12% lower than the closest competing device, including MOSFETs with the standard 0.8 mm profile. The lower on-resistance translates into lower conduction losses.
Vishay Siliconix SiA444DJT 30V N-Channel TrenchFET® Power MOSFETs feature the industry's lowest height for an N-Channel MOSFET in the 2mm by 2mm footprint area. Vishay Siliconix SiA444DJT TrenchFET Power MOSFETs come in a Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA444DJT is 13% thinner than the next thinnest 2mm by 2mm device and 19% thinner than the standard 0.8mm height. It offers low on-resistance and the industry's lowest on-resistance times gather charge for 2mm by 2mm power MOSFETs. These TrenchFET power MOSFETs are ideal for use in DC/DC converter and high frequency switching applications.
Vishay Siliconix Si4190DY ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. The Vishay Siliconix Si4190DY provides on-resistance of 8.8mΩ at 10V and 12mΩ at 4.5V. These ThunderFET power MOSFETs have an industry-best figure of merit (FOM) of 340mΩ-nC at 10V and 220mΩ-nC at 4.5V. The Vishay Siliconix Si4190DY is a TrenchFET® device optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications.
Vishay Siliconix SiR870DP 100V N-channel TrenchFET® Power MOSFETs use ThunderFET® technology to provide the industry's lowest on-resistance of 7.8mΩ at 4.5V. The Vishay Siliconix SiR870DP also offers a very low on-resistance of 6mΩ at 10V. These Vishay Siliconix ThunderFET devices also provide an industry-low 208 mΩ-nC figure of merit (FOM) at 4.5V. The low on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. SiR870DP 100V TrenchFET Power MOSFETs are designed for higher frequency and switching applications.
Vishay Siliconix SiP324xx Series Load Switches are slew rate controlled load switches designed with low switch on-resistance. Vishay Siliconix SiP324xx Series Slew Rate Controlled Load Switches have a low voltage control logic interface (On/Off interface). The SiP32411 is designed for 1.1 V to 5.5 V operation and features a controlled soft-on slew rate that limits the inrush current for designs of capacitive load or noise sensitive loads. It also integrates an output discharge switch that enables fast shutdown load discharge. When the switch is off, it provides reverse blocking to prevent high current flowing into the power source. The SiP32411DN is in a TDFN4 package of 1.2 mm by 1.6 mm, and the SiP32411DR is in a SC70-6 package. The SiP32431 is a high side switch with reverse blocking capability which operates with an input voltage from 1.5 V to 5.5 V and has a very low operating current. The SiP32431 is available in lead (Pb)-free package options including 6 pin SC70-6, and 4 pin TDFN4 1.2 mm x 1.6 mm packages. The SiP32431 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications.
The Vishay Siliconix SiHG47N60S 47 A, N-channel power MOSFET features the industry's lowest gate charge times on-resistance figure of merit (FOM). The Vishay Siliconix SiHG47N60S features a 15.12 Ω-nC gate charge times on-resistance. The Vishay Siliconix SiHG47N60S also provides ultra-low maximum on-resistance of 0.07 Ω at a 10 V gate drive. This Vishay Siliconix device is produced using Vishay Super Junction technology and is tailored to minimize on-state resistance and withstand high energy pulse in avalanche and commutation mode. Vishay Siliconix SiHG47N60S power MOSFETs are ideal for use in a variety of applications, including inverter circuits and PWM full-bridge topologies in solar and wind inverters. They are also optimized for telecom, server, and motor-control power applications.
Vishay Siliconix TrenchFET® Gen III P-Channel MOSFETs feature the newest generation of p-channel silicon technology, enabling these devices to provide industry-best on-resistance specifications, such as 1.9 milliohms in the PowerPAK® SO-8. With on-resistance as low as half the level of the next best devices on the market, Vishay Siliconix TrenchFET Gen III P-Channel power MOSFETs provide lower conduction losses for higher efficiency and longer time between charges for battery-operated applications. These Vishay Siliconix devices offer a full range of package options, including the 1.6-mm by 1.6-mm PowerPAK® SC-75. The new 20V SiA433EDJ TrenchFET Gen III P-Channel MOSFET provides the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The SiA433EDJ is the only 20-V MOSFET with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.