NXP BLF18xXR(S) Power Transistors deliver stability and unsurpassed performance under the most severe load mismatch conditions (VSWR greater than 65:1 at P3dB). These new devices build on NXP's proven track record as a leading RF power transistor supplier and extend NXP's portfolio, bringing extreme ruggedness, linearity, stability, power and simplicity in design. XR LDMOS devices are ideal for demanding (kW) professional smart RF energy applications in the ISM (Industrial, Scientific and Medical) frequency bands from igniting plasmas and lasers to powering synchrotrons and MRIs. They also give a real power and efficiency performance boost to terrestrial broadcasting. Offering the highest efficiency solutions in FM broadcast transmitters, they also provide superior correctable linear performance and pre-distortion characteristics for IBOC Digital Radio, VHF-TV and other linear applications. NXP's leading-edge Gen6 high voltage XR LDMOS technology exceeds VDMOS performance, ruggedness and reliability. Further benefits include improved Class C operation and simplified module layout, helping to ease overall design-in requirements.