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All Products > Semiconductors > Discrete Semiconductors > Transistors > RF Transistors > RF MOSFET Transistors

NXP LDMOS RF Power Transistors

NXP LDMOS RF Power Transistors are the dominant device technology used in high power RF amplifiers for frequencies ranging from 10 MHz to 3.8 GHz. They offer significant advantages over silicon bipolar transistors, such as very high ruggedness and efficiency, high gain, and compatibility with low cost packaging platforms. NXP's LDMOS devices deliver record performance up to 3.8 GHz and, for example, help wireless network operators realize best-in-class efficiencies for wireless base stations and hence reduce operating costs.
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Category   Semiconductors >  Discrete Semiconductors >  Transistors >  RF Transistors >  RF MOSFET Transistors

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NXP Semiconductors BLF645,112 NXP Semiconductors RF MOSFET Transistors TRANSISTOR PWR LDMOS
Datasheet Non-Stocked Lead-Time 15 Weeks
60: $126.56
120: View



Min.: 60
Mult.: 60
N-Channel 32 A 65 V 220 mOhms 18 dB 100 W + 150 C SMD/SMT SOT-540A-5 Tube
NXP Semiconductors BLF861A,112 NXP Semiconductors RF MOSFET Transistors RF LDMOS 150W UHF
Datasheet Non-Stocked
60: $128.30
120: Quote



Min.: 60
Mult.: 60
N-Channel 18 A 65 V 160 mOhms Si 14.5 dB 150 W + 150 C SMD/SMT SOT-540A-5 Tube
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