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All Products > Semiconductors > Discrete Semiconductors > Transistors > Transistors RF > Transistors RF MOSFET

NXP LDMOS RF Power Transistors

NXP LDMOS RF Power Transistors are the dominant device technology used in high power RF amplifiers for frequencies ranging from 10 MHz to 3.8 GHz. They offer significant advantages over silicon bipolar transistors, such as very high ruggedness and efficiency, high gain, and compatibility with low cost packaging platforms. NXP's LDMOS devices deliver record performance up to 3.8 GHz and, for example, help wireless network operators realize best-in-class efficiencies for wireless base stations and hence reduce operating costs.
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Category   Semiconductors >  Discrete Semiconductors >  Transistors >  Transistors RF >  Transistors RF MOSFET

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NXP Semiconductors BLF6H10L-160,112
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BLF6H10L-160,112

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NXP Semiconductors Transistors RF MOSFET 700-1GHz 104V 20dB
Page 717

Data Sheet
15
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Single N-Channel 729 MHz to 960 MHz 20 dB 160 W 104 V 15.75 A 13 V + 200 C SMD/SMT SOT-467C Tube
NXP Semiconductors BLF645,112
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NXP Semiconductors Transistors RF MOSFET TRANSISTOR PWR LDMOS
Data Sheet 1
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Dual N-Channel 1.3 GHz 18 dB 100 W 65 V 32 A 11 V + 150 C SMD/SMT SOT-540A Tube
NXP Semiconductors BLF861A,112
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NXP Semiconductors Transistors RF MOSFET RF LDMOS 150W UHF
Data Sheet 67
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Dual N-Channel 860 MHz 14.5 dB 150 W 65 V 18 A 15 V + 150 C SMD/SMT SOT-540A Tube
NXP Semiconductors BLF6G27-45,112
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NXP Semiconductors Transistors RF MOSFET LDMOS TNS
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Single N-Channel 2.5 GHz to 2.7 GHz 16.5 dB 7 W 65 V 20 A - 0.5 V, 13 V + 150 C SMD/SMT CDFM Tube
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