TriQuint T1Gxx GaN Power Transistors
TriQuint Semiconductor T1Gxx GaN Power Transistors are 18-55W (P3dB) discrete GaNs on SiC HEMT which operate from DC to 6GHz. T1Gxx GaN Power Transistors are constructed with TriQuint's proven 0.25μm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Applications for TriQuint Semiconductor T1Gxx GaN Power Transistors include avionics, test instrumentation, wideband amplifiers, and military and civilian radar.