The ISSI Pseudo SRAM product line combines the best features of SRAM and DRAM to provide designers with an easy-to-use, low-power, cost-effective memory solution. These ISSI Pseudo SRAM devices have a pinout identical to and are drop-in replacements for regular 4 MB and 8 MB low power SRAMs. The IS66WV25616BLL and IS66WV51216BLL are organized as 256Kx16 and 512Kx16, respectively, with access times as fast as 55ns and typical operating current of only 15mA. ISSI Pseudo SRAMs are fabricated on 0.14 micron DRAM technology and are available in commercial 0° to 70º C and industrial -40° C to 85º C temperature ranges. Both 1.8V and 3.0V operating voltage versions are available.