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TriQuint Semiconductor POWERBAND™ RF Power Transistors

The TriQuint Semiconductor POWERBANDRF Power Transistor family, named one of the Top Products of 2009 by Microwaves & RF Magazine, features exceptional instantaneous band-width performance and increased efficiency for smaller and lighter systems, reduced system component costs, and reduced energy consumption. The TriQuint Semiconductor T1L2003028-SP POWERBAND discrete LDMOS enhancement mode RF Power Transistor is designed to operate from 500MHz to 2GHz in wide-band circuits. The T1L2003028-SP has an instantaneous band-width P1dB output power of 30 watts across the entire band when operated in the TriQuint wide-band test fixture. The T1L2003028-SP can also be used in narrow band applications and is rated at 45 watts P1dB at 2GHz. The TriQuint Semiconductor T1P2701012-SP POWERBAND discrete pHEMT depletion mode RF POWER Transistor is designed to operate from 500MHz to 3GHz in wide-band circuits. The T1P2701012-SP has an instantaneous band-width P1dB output power of 10 watts across the entire band when operated in the TriQuint wide-band test fixture. The T1P2701012-SP can also be used in narrow band applications and is rated at 15 watts P1dB at 3GHz.


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