Intel's 32nm Atom Family of processors are based on 32nm process technology with second generation high-k + metal gate transistors. The 32nm process technology builds upon the tremendously successful 45nm process technology –the first to use high-k + metal gate transistors. The improvements over the first generation are many, including reduction of the equivalent oxide thickness of the high-k dielectric, from 1.0nm on 45nm process to 0.9nm on the 32nm process, and reduction of the gate length to 30nm. Transistor gate pitch continues to scale 0.7x every two years -with Intel's 32nm process providing the tightest gate pitch in the industry. The 32nm process also uses the same basic replacement metal gate process flow as Intel's 45nm process technology. These improvements are critical for scaling the size of integrated circuits and increasing transistor performance. The 32nm process technology with second generation high-k + metal gate transistors enables designers to optimize for size, performance, and power simultaneously.