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All Products > Semiconductors > RF Integrated Circuits > RF Amplifier

Cree GaN HEMT based MMICs

Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.
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Category   Semiconductors >  RF Integrated Circuits >  RF Amplifier

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Cree, Inc. CMPA0060025F
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CMPA0060025F

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Cree, Inc. RF Amplifier .02-6GHz 25W GaN Gain@ 3GHz 16.6dB
This product may require additional documentation to export from the United States.
Data Sheet 41
In Stock
1: $651.69



Min.: 1
Mult.: 1
GaN HEMT MMIC Power Amplifier 20 MHz to 6000 MHz 17 dB - - 32 dBm 28 V 4 mA 20 MHz to 6000 MHz + 150 C SMD/SMT 780019 Tray
Cree, Inc. CMPA2560025F
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CMPA2560025F

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Cree, Inc. RF Amplifier 2.5-6GHz 25W GaN Gain 24dB PAE 40%
This product may require additional documentation to export from the United States.
Data Sheet 43
In Stock
1: $651.69



Min.: 1
Mult.: 1
GaN HEMT MMIC Power Amplifier 2.5 GHz to 6 GHz 25 dB - - 26 dBm 28 V 20 mA 2.5 GHz to 6 GHz + 150 C SMD/SMT 780019 Tray
Cree, Inc. CMPA0060002F
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CMPA0060002F

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Cree, Inc. RF Amplifier .02-6GHz 25W GaN Gain @ 3Ghz 16.8dB
Data Sheet 45
In Stock
1: $202.79



Min.: 1
Mult.: 1
GaN HEMT MMIC Power Amplifier 20 MHz to 6000 MHz 17 dB - - 23 dBm 28 V 4 mA 4 GHz + 150 C SMD/SMT 780019 Tray
Cree, Inc. CMPA5585025F
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CMPA5585025F

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Cree, Inc. RF Amplifier 5.5-8.5GHz 25W GaN Gain 25dB
This product may require additional documentation to export from the United States.
Data Sheet 22
In Stock
1: $415.28



Min.: 1
Mult.: 1
GaN HEMT MMIC Power Amplifier 5.5 GHz to 8.5 GHz 25 dB - - 20 dBm 28 V 13.2 mA 5.5 GHz to 8.5 GHz + 150 C SMD/SMT 440208 Tray
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