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All Products > Semiconductors > Amplifier ICs > Power Amplifiers

Cree GaN HEMT based MMICs

Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.
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Category   Semiconductors >  Amplifier ICs >  Power Amplifiers

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Cree, Inc. CMPA0060025F
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CMPA0060025F

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Cree, Inc. Power Amplifiers .02-6GHz 25W GaN Gain@ 3GHz 16.6dB
This product may require additional documentation to export from the United States.
Data Sheet 41
In Stock
1: $651.69



Min.: 1
Mult.: 1
1 Channel 780019 50 V 100 mA - 65 C to + 150 C Tray
Cree, Inc. CMPA2560025F
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CMPA2560025F

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Cree, Inc. Power Amplifiers 2.5-6GHz 25W GaN Gain 24dB PAE 40%
This product may require additional documentation to export from the United States.
Data Sheet 43
In Stock
1: $651.69



Min.: 1
Mult.: 1
1 Channel 780019 28 V 1200 mA - 65 C to + 150 C Tray
Cree, Inc. CMPA0060002F
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CMPA0060002F

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Cree, Inc. Power Amplifiers .02-6GHz 25W GaN Gain @ 3Ghz 16.8dB
Data Sheet 47
In Stock
1: $202.79



Min.: 1
Mult.: 1
1 Channel 780019 28 V 100 mA - 65 C to + 150 C Tray
Cree, Inc. CMPA5585025F
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CMPA5585025F

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Cree, Inc. Power Amplifiers 5.5-8.5GHz 25W GaN Gain 25dB
This product may require additional documentation to export from the United States.
Data Sheet 22
In Stock
1: $415.28



Min.: 1
Mult.: 1
1 Channel 440208 28 V 285 mA - 65 C to + 150 C Tray
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