TriQuint's TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.