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All Products > Semiconductors > Discrete Semiconductors > Transistors > IGBT Transistors

IXYS IGBT Power Transistors

IXYS IGBT Power Transistors include the IXBH42N170A, IXBT42N170, IXGH24N60AU1, and the IXGK75N250. The IXYS IXBH42N170A is a BIMOSFET™ Monolithic Bipolar MOS Transistor featuring high blocking voltage, fast switching, a high current handling capability, and MOS Gate turn-on for drive simplicity. The IXBT42N170 is a high voltage, high gain BIMOSFET™ Monolithic Bipolar MOS Transistor also featuring high blocking voltage, as well as low conduction losses, high power density, and a low gate drive requirement. The IXGH24N60AU1 is a HiPerFAST™ IGBT with Diode featuring an IGBT and anti-parallel Fast Recovery Epitaxial Diode (FRED) in one package, a 2nd generation HDMOS™ process, and a MOS Gate turn-on for drive simplicity. And the IXGK75N250 is a high voltage IGBT for capacitor discharge applications, featuring very high peak current capability, low saturation voltage, MOS Gate turn-on, and a rugged NPT structure. IXYS IGBT Power Transistors are useful for a wide variety of applications, including AC motor speed control, uninterruptible power supplies (UPS), switched-mode and resonant-mode power supplies, capacitor discharge circuits, laser generators, AC switches, and pulser circuits.

Category   Semiconductors >  Discrete Semiconductors >  Transistors >  IGBT Transistors

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IXYS IXBH42N170A
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IXYS IGBT Transistors BIMOSET 42A 1700V
Page 2,541

Data Sheet
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Single 1700 V 5.2 V 20 V + 150 C TO-247-3 Tube
IXYS IXBT42N170
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IXYS IGBT Transistors BIMOSFET 1700V 75A
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Data Sheet
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100: $16.71
250: $15.63
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Single 1700 V 2.3 V 20 V + 150 C TO-268-3 Tube
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