IXYS IGBT Power Transistors
IXYS IGBT Power Transistors include the IXBH42N170A, IXBT42N170, IXGH24N60AU1, and the IXGK75N250. The IXYS IXBH42N170A is a BIMOSFET™ Monolithic Bipolar MOS Transistor featuring high blocking voltage, fast switching, a high current handling capability, and MOS Gate turn-on for drive simplicity. The IXBT42N170 is a high voltage, high gain BIMOSFET™ Monolithic Bipolar MOS Transistor also featuring high blocking voltage, as well as low conduction losses, high power density, and a low gate drive requirement. The IXGH24N60AU1 is a HiPerFAST™ IGBT with Diode featuring an IGBT and anti-parallel Fast Recovery Epitaxial Diode (FRED) in one package, a 2nd generation HDMOS™ process, and a MOS Gate turn-on for drive simplicity. And the IXGK75N250 is a high voltage IGBT for capacitor discharge applications, featuring very high peak current capability, low saturation voltage, MOS Gate turn-on, and a rugged NPT structure. IXYS IGBT Power Transistors are useful for a wide variety of applications, including AC motor speed control, uninterruptible power supplies (UPS), switched-mode and resonant-mode power supplies, capacitor discharge circuits, laser generators, AC switches, and pulser circuits.