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All Products > Semiconductors > Discrete Semiconductors > Diodes & Rectifiers > Schottky Diodes & Rectifiers

Toshiba SiC Schottky Barrier Diode

Toshiba SiC Schottky Barrier Diode are fabricated using silicon carbide (SiC), a wide-bandgap semiconductor, to provide high breakdown voltage that has never been possible with silicon (Si) SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behavior, making them the ideal replacements for Si fast-recovery diodes (FRDs) to improve power supply efficiency.
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Category   Semiconductors >  Discrete Semiconductors >  Diodes & Rectifiers >  Schottky Diodes & Rectifiers

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Toshiba TRS6E65C,S1Q
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TRS6E65C,S1Q

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Toshiba Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 6A Data Sheet 48
In Stock
1: $7.50
10: $6.76
25: $6.15
100: $5.55
250: View



Min.: 1
Mult.: 1
Schottky Silicon Carbide Diodes 650 V 6 A 30 A Single 1.7 V 90 uA - 55 C to + 175 C Through Hole TO-220-2
Toshiba TRS8E65C,S1Q
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TRS8E65C,S1Q

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Toshiba Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 8A Data Sheet 50
In Stock
1: $9.13
10: $8.22
25: $7.48
100: $6.75
250: View



Min.: 1
Mult.: 1
Schottky Silicon Carbide Diodes 650 V 8 A 40 A Single 1.7 V 90 uA - 55 C to + 175 C Through Hole TO-220-2
Toshiba TRS12E65C,S1Q
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TRS12E65C,S1Q

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Toshiba Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 12A Data Sheet 35
In Stock
1: $12.25
10: $11.04
25: $10.04
100: $9.06
250: View



Min.: 1
Mult.: 1
Schottky Silicon Carbide Diodes 650 V 12 A 60 A Single 1.7 V 90 uA - 55 C to + 175 C Through Hole TO-220-2
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