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Vishay Siliconix Si7703EDN P-Channel TrenchFET® Power MOSFET

Vishay Siliconix's Si7703EDN P-Channel TrenchFET® Power MOSFET is a Single Channel P-Channel MOSFET offered in a low 1.07 mm profile package with ultra-low thermal resistance. The Si7703EDN P-Channel TrenchFET® Power MOSFET is part of the popular TrenchFET® Power MOSFETs that are rated down to 1.8 V and it is ESD protected up to 4500 V. Vishay Siliconix's Si7703EDN P-Channel TrenchFET® Power MOSFET comes with a drain-source voltage (VDS) of -20 V and a drain-source on resistance (RDS(on)) of 0.048 Ω (@ VGS = 4.5 V, ID = -6.3 A).
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