Infineon's TRENCHSTOP™5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. There is no other IGBT on the market that can match the performance of the TRENCHSTOP™5. These are designed for
applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap of efficiency opens up new opportunities for designers to explore.