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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix TrenchFET Gen III MOSFET
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Vishay Siliconix TrenchFET® Gen III Power MOSFETs with TurboFET™

The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8 package type. The Vishay Siliconix TrenchFet Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFet Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Additional Resources
SI7137DP Datasheet
SIR850DP Datasheet
SI7784DP Datasheet
SIR496DP Datasheet
SIS426DN Datasheet
SI7718DN Datasheet
SIR440DP Datasheet
SIR476DP Datasheet
SIR866DP Datasheet
SIP890DP Datasheet
SIP892DP Datasheet
SIZ902DT Datasheet














Breakthrough PWM-Optimized TurboFET Technology Lowers Gate Charge; Industry-lowest rDS(on) x Qgd FOM increases efficiency


Features
  • Charge balanced TrenchFET Gen III utilizing TurboFET drain structure technology provides record-breaking gate charge while maintaining excellent on-resistance performance
    • On-resistance times gate-drain charge FOM down to 23.2 mΩ-nC at VGS = 4.5 V
    • Low switching losses enable high efficiency and low power consumption
  • Lower gate charge enables higher frequency operation, allowing the use of smaller passive components in dc-to-dc converters
  • Available in thermally advanced PowerPAK® 1212-8 and PowerPAK SO-8 packages 
Applications

High-side MOSFET in synchronous buck
  • LNotebook Computers
  • VRMs
  • Servers
  • Systems using point-of-load (POL)

TrenchFET® Gen III with TurboFET Technology

SI7784DP High Side Efficiency Comparison (SI7192DP Common Low Side) 12 Vin / 1.3 Vout / 300 kHzc

  • Vishay
  • Power Management
  • Power|Semiconductors|Transistors (FETs, Bipolars & IGBTs)