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Home » NEWEST Products » New by Manufacturer » Vishay » TrenchFET Gen IV MOSFETs - Vishay
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Vishay Siliconix TrenchFET Gen IV N-Channel MOSFETs

Vishay Siliconix TrenchFET® Gen IV
N-Channel MOSFETs

Vishay Siliconix TrenchFET® Gen IV N-Channel MOSFETs are Vishay's next-generation TrenchFET® family of N-Channel power MOSFETs. These new devices utilize a new high-density design and the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35mΩ at 4.5V and low total gate charge in the PowerPAK® SO-8 and 1212-8 packages. Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption, very low Qdg/Qgs ratio of 0.5 or less, space saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, synchronous buck converters and OR-ing.

Features
  • Next-generation technology optimizes several key specifications:
  • Down to industry best RDS(on) of 0.00135Ω at VGS = 4.5 V
  • Down to ultra-low RDS(on) of 0.001 Ω at VGS = 10 V
  • Very low Qgd and exceptionally low Qgd/Qgs ratio: < 0.5
  • Qgd/Qgs ratio down to 0.3
  • Improved immunity to CdV/dt gate coupling
Applications
  • SMPS
  • VRM
  • POL
  • Telecom Bricks
  • PCs
  • Servers

Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet
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  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)