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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiR662DP TrenchFET Power MOSFETs
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Vishay Siliconix SiR662DP 60V N-Channel TrenchFET Power MOSFETs
Vishay Siliconix SiR662DP 60V N-Channel TrenchFET Power MOSFETs

Order Vishay Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFETs View Product Detail

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Vishay Siliconix SiR662DP 60V N-Channel
TrenchFET® Power MOSFETs

Vishay Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFET provides industry-leading on-resistance values up to 27% lower than the next closest competing device. Vishay Siliconix SiR662DP TrenchFET® Power MOSFET also offer the industry's best on-resistance times gate charge figure of merit (FOM) that is up to 57% better than the closest competing device. SiR662DP TrenchFET® Power MOSFET provide lower conduction losses while also lowering switching losses, especially at higher frequency. It is designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications.

Features
  • VDS = 60V
  • On-resistance up to 27% better than next best device
  • Lowers conduction losses
  • Figure of merit (FOM) up to 57 % better than next best device
  • Lowers switching losses, especially at higher frequency
  • On-resistance ratings down to VGS = 4.5 V
  • PowerPAK® SO-8 Package
Applications
  • Isolated DC/DC converters: primary side switch and secondary side synchronous rectification for IBC and POL
  • AC/DC adapters and industrial electronic systems
  • Boost converters and load switches for LED backlighting

PowerPAK SO-8

PowerPAK SO-8
  • Vishay
  • Power Management
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)