Vishay Siliconix SiR662DP 60V N-Channel
TrenchFET® Power MOSFETs
Vishay Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFETs provide industry-leading on-resistance values up to 27% lower than the next closest competing device. Vishay Siliconix SiR662DP TrenchFET® Power MOSFETs also offer the industry's best on-resistance times gate charge figure of merit (FOM) that is up to 57% better than the closest competing device. SiR662DP TrenchFET® Power MOSFETs provide lower conduction losses while also lowering switching losses, especially at higher frequency. Another new industry leading n-channel TrenchFET® device is the SiR640DP. Vishay Siliconix SiR640DP 40V Power MOSFETs offer on-resistance values up to 4% lower than the next best competing device while its FOM is up to 15% lower. Both devices are designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, and more.