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Home » NEWEST Products » New by Manufacturer » Vishay » SiHx16N50C Power MOSFETs - Vishay
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Vishay Siliconix SiHx16N50C 500V
N-Channel Power MOSFETs

Vishay Siliconix SiHx16N50C 500V, 16A N-channel power MOSFETS feature ultra-low 0.38Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 68nC. The low on-resistance of the Vishay Siliconix SiHP16N50C (TO-220AB package), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC) MOSFETs translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, PWM half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies. Gate charges times on-resistance is a low 25.84Ω-nC. Vishay Siliconix SiHx16N50C N-channel power MOSFETs are produced using Vishay Planar Cell technology that has been tailored to minimize on-state resistance and withstand high energy pulse in the avalanche and commutation modes. The SiHP16N50C, SiHF16N50C, SiHB16N50C, and SiHG16N50C also offer faster switching speeds and reduced switching losses than previous-generation MOSFETs.

Features
  • Low Figure-of-Merit Ron x Qg
  • 100% Avalanche Tested
  • Gate Charge Improved
  • Trr/Qrr Improved
  • Compliant to RoHS Directive 2002/95/EC
Applications
  • Notebook computer AC adapters
  • PC power supplies
  • LCD TVs
  • Open-frame power supplies
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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