Vishay Siliconix SiHx16N50C 500-V
N-Channel Power MOSFETs
Vishay Siliconix SiHx16N50C 500-V, 16-A N-channel power MOSFETS feature ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive and an improved gate charge of 68nC. The low on-resistance of the Vishay Siliconix SiHP16N50C (TO-220AB package), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC) MOSFETs translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, PWM half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies. Gate charges times on-resistance is a low 25.84 Ω-nC. Vishay Siliconix SiHx16N50C N-channel power MOSFETs are produced using Vishay Planar Cell technology that has been tailored to minimize on-state resistance and withstand high energy pulse in the avalanche and commutation modes. The SiHP16N50C, SiHF16N50C, SiHB16N50C, and SiHG16N50C also offer faster switching speeds and reduced switching losses than previous-generation MOSFETs.