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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiHx12N50C-E3 500V Power MOSFETs
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Vishay Siliconix SiHx12N50C-E3 500V N-Channel Power MOSFETs

Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs

Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and a gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.

Features
  • Gate charge = 48nC
  • Gate charge times on-resistance = 26.64Ω-nC
  • VDS (V) at TJ max = 560V
  • TO-220 (SiHP12N50-E3), TO-220 FULLPAK (SiHF12N50C-E3), and D²PAK (SiHB12N50C-E3) package options
  • 100% Avalanche Tested
Applications
  • Notebook computer AC adapters
  • PCs
  • LCD TVs
  • Open-frame power supplies

Schematic
  • Vishay
  • Power Management
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)