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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiA923EDJ TrenchFET® Gen III Power MOSFETs
NEWEST Products
Vishay Siliconix SiA923EDJ Dual 20V TrenchFET® Gen III Power MOSFETs

Vishay Siliconix SiA923EDJ Dual 20V TrenchFET®
Gen III Power MOSFETs

Vishay Siliconix SiA923EDJ dual 20V p-channel TrenchFET® Gen III power MOSFETs with an 8V gate-to-source voltage feature the lowest on-resistance for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. Vishay Siliconix SiA923EDJ TrenchFET Gen III power MOSFETs are designed for use in DC-to-DC converters as well as load switches in handheld devices, such as smartphones, MP3 players, table PCs, and eBooks. The lower on-resistance of the SiA923EDJ translates into lower conduction losses, saving power and prolonging battery life between charges. The on-resistance ratings down to 1.5V allow SiA923EDJ power MOSFETs to work with the lower-voltage gate drives and lower bus voltages common in handheld devices without the space and cost of level-shifting circuitry. The ultra-low on-resistance of this Vishay Siliconix power MOSFET is up to 12% lower than the closest competing p-channel device.

View entire Vishay Siliconix Power MOSFET line

Features
  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area (2mm x 2mm)
  • Low On-Resistance
    • 54mΩ at 4.5V
    • 70mΩ at 2.5V
    • 104mΩ at 1.8V
    • 165mΩ at 1.5V
  • Typical ESD Protection: 2500 V
  • 100% Rg Tested
  • Compliant to RoHS Directive 2002/95/EC
Applications
  • Charger Switches and Load Switches for Portable Devices
  • DC/DC Converters
  • Vishay
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)