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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiA427DJ 8V TrenchFET Power MOSFETs
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Vishay Siliconix SiA427DJ 8V TrenchFET Power MOSFETs

Vishay Siliconix SiA427DJ 8V TrenchFET
Power MOSFETs

Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more.

Features
  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
  • Low On-Resistance
    • 16mΩ at 4.5V
    • 26mΩ at 1.8V
    • 32mΩ at 1.5V
    • 95mΩ at 1.2V
  • 100 % Rg Tested
  • Compliant to RoHS Directive 2002/95/EC
Applications
  • Load Switch, for 1.2 V Power Line for Portable and Handheld Devices
  • Vishay
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)