Vishay Siliconix SiHG47N60S N-Channel MOSFETs
The Vishay Siliconix SiHG47N60S 47 A, N-Channel Power MOSFET features the industry's lowest gate charge times on-resistance figure of merit (FOM). The Vishay Siliconix SiHG47N60S features a 15.12 Ω-nC gate charge times on-resistance. The Vishay Siliconix SiHG47N60S also provides ultra-low maximum on-resistance of 0.07 Ω at a 10 V gate drive. This Vishay Siliconix device is produced using Vishay Super Junction technology and is tailored to minimize on-state resistance and withstand high energy pulse in avalanche and commutation mode. Vishay Siliconix SiHG47N60S power MOSFETs are ideal for use in a variety of applications, including inverter circuits and PWM full-bridge topologies in solar and wind inverters. They are also optimized for telecom, server, and motor-control power applications.