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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiHG47N60S N-Channel Power MOSFETs
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Vishay Siliconix SiHG47N60S N-Channel Power MOSFETs

Vishay Siliconix SiHG47N60S N-Channel MOSFETs

The Vishay Siliconix SiHG47N60S 47 A, N-Channel Power MOSFET features the industry's lowest gate charge times on-resistance figure of merit (FOM). The Vishay Siliconix SiHG47N60S features a 15.12 Ω-nC gate charge times on-resistance. The Vishay Siliconix SiHG47N60S also provides ultra-low maximum on-resistance of 0.07 Ω at a 10 V gate drive. This Vishay Siliconix device is produced using Vishay Super Junction technology and is tailored to minimize on-state resistance and withstand high energy pulse in avalanche and commutation mode. Vishay Siliconix SiHG47N60S power MOSFETs are ideal for use in a variety of applications, including inverter circuits and PWM full-bridge topologies in solar and wind inverters. They are also optimized for telecom, server, and motor-control power applications.

Features
  • Industry-low 15.12 Ω-nC gate charge times on-resistance
  • Ultra-low maximum on-resistance of 0.07 Ω at a 10 V gate drive
  • Lowers conduction losses and saves energy
  • Gate charge of 216 nC
  • 600 V drain-source voltage
  • 47 A continuous drain current
  • Package: TO-247AC
  • Vishay Super Junction technology
  • Compliant to RoHS Directive 2002/95/EC
  • 100 % avalanche tested for reliable operation
Applications
  • Inverter circuits and pulsewidth modulation (PWM) full-bridge topologies in solar and wind inverters
  • Telecom, server, and motor control power applications

Block Diagram
Part NumberPackage / CaseTransistor PolarityVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet
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