Contact Mouser (USA)  (800) 346-6873     |     Feedback         
 |    Change Country  Change Location  USD
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » Vishay » SiA444DJT 30V N-Channel Power MOSFETs - Vishay
NEWEST Products
Vishay Siliconix SiA444DJT 30V N-Channel TrenchFET Power MOSFETs

Vishay Siliconix SiA444DJT 30V N-Channel
TrenchFET® Power MOSFETs

Vishay Siliconix SiA444DJT 30V N-Channel TrenchFET® Power MOSFETs feature the industry's lowest height for an N-Channel MOSFET in the 2mm by 2mm footprint area. Vishay Siliconix SiA444DJT TrenchFET® Power MOSFETs come in a Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA444DJT is 13% thinner than the next thinnest 2mm by 2mm device and 19% thinner than the standard 0.8mm height. It offers low on-resistance and the industry's lowest on-resistance times gather charge for 2mm by 2mm power MOSFETs.

View entire Vishay Siliconix Power MOSFET line

  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
    • Ultra-Thin 0.6 mm height
  • 30V drain-source voltage
  • On-resistance:
    • 17mΩ at 10V
    • 22mΩ at 4.5V
  • FOM:
    • 170mΩ-nC at 10V
    • 110mΩ-nC at 4.5V
  • DC/DC Converter
  • High Frequency Switching
Part NumberPackage / CaseTransistor PolarityVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet
Loading First Previous Next Last
  • Vishay
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)