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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiA444DJT 30V N-Channel Power MOSFETs
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Vishay Siliconix SiA444DJT 30V N-Channel TrenchFET Power MOSFETs

Vishay Siliconix SiA444DJT 30V N-Channel
TrenchFET® Power MOSFETs

Vishay Siliconix SiA444DJT 30V N-Channel TrenchFET® Power MOSFETs feature the industry's lowest height for an N-Channel MOSFET in the 2mm by 2mm footprint area. Vishay Siliconix SiA444DJT TrenchFET® Power MOSFETs come in a Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA444DJT is 13% thinner than the next thinnest 2mm by 2mm device and 19% thinner than the standard 0.8mm height. It offers low on-resistance and the industry's lowest on-resistance times gather charge for 2mm by 2mm power MOSFETs.

View entire Vishay Siliconix Power MOSFET line

Features
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
    • Ultra-Thin 0.6 mm height
  • 30V drain-source voltage
  • On-resistance:
    • 17mΩ at 10V
    • 22mΩ at 4.5V
  • FOM:
    • 170mΩ-nC at 10V
    • 110mΩ-nC at 4.5V
Applications
  • DC/DC Converter
  • High Frequency Switching
Part NumberPackage / CaseTransistor PolarityVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet
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