Vishay Siliconix SiA429DJT 20V P-Channel
TrenchFET® Power MOSFETs
Vishay Siliconix SiA429DJT 20V P-Channel TrenchFET® Power MOSFETs offer the industry's lowest on-resistance for a P-Channel device with a sub-0.8mm profile and the lowest on-resistance for all 2mm by 2mm P-Channel devices. Vishay Siliconix SiA429DJT TrenchFET® Power MOSFETs come in a thermally enhanced Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA429DJT is ideal for DC/DC converters and load and charger switches. The on-resistance of SiA429DJT TrenchFET® MOSFETs at 1.8V is 12% lower than the closest competing device, including MOSFETs with the standard 0.8 mm profile. The lower on-resistance translates into lower conduction losses.