Contact Mouser (USA)  (800) 346-6873     |     Feedback        
View Cart     |     Change Location  USD
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » Vishay » SiA429DJT 20V P-Channel TrenchFET MOSFETs - Vishay
NEWEST Products
Vishay Siliconix SiA429DJT 20V P-Channel TrenchFET MOSFETs

Vishay Siliconix SiA429DJT 20V P-Channel
TrenchFET® Power MOSFETs

Vishay Siliconix SiA429DJT 20V P-Channel TrenchFET® Power MOSFETs offer the industry's lowest on-resistance for a P-Channel device with a sub-0.8mm profile and the lowest on-resistance for all 2mm by 2mm P-Channel devices. Vishay Siliconix SiA429DJT TrenchFET® Power MOSFETs come in a thermally enhanced Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA429DJT is ideal for DC/DC converters and load and charger switches. The on-resistance of SiA429DJT TrenchFET® MOSFETs at 1.8V is 12% lower than the closest competing device, including MOSFETs with the standard 0.8 mm profile. The lower on-resistance translates into lower conduction losses.

Features
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
    • Ultra-Thin 0.6 mm height
  • 20 V drain-source voltage
  • On-resistance:
    • 20.5mΩ at 4.5V
    • 27mΩ at 2.5V
    • 36mΩ at 1.8V
    • 60mΩ at 1.5V
Applications
  • Load Switch and Charger Switch for Portable Devices
  • DC/DC Converter
Part NumberPackage / CaseTransistor PolarityVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet








Loading First Previous Next Last
  • Vishay
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)