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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SIR812DP N-Channel TrenchFET® Gen IV Power MOSFET
NEWEST Products
Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs

Vishay Siliconix SIR812DP N-Channel
TrenchFET® Gen IV Power MOSFET

Vishay Siliconix's SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET. SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low on-resistance of 0.00165 Ohms and 60 A continuous drain current. Available in the PowerPAK SO-8 package and 100% Rg and UIS tested, SiR812DP is well-suited for motor control, industrial, load switch, and ORing applications.

 Features
  • TrenchFET® Power MOSFET
  • 100% Rg and UIS Tested
  • Halogen-free According to IEC 61249-2-21 Definition
  • Compliant to RoHS Directive 2002/95/EC
Applications
  • Motor Control
  • Industrial
  • Load Switch
  • ORing


Part NumberPackageDrain
Source
Voltage
Continous
Drain
Current
RDS(on)Total
Gate
Charge
Datasheet
@10V @4.5V
SIR812DP-T1-GE3 PowerPAK SO-8 30V 60A .00145Ω .00165Ω 109nC


  • Vishay
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)