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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET
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Vishay Siliconix SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET

Vishay Siliconix SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET

Vishay Siliconix SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET features the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET is the only such device to offer an on-resistance rating (RDS(on)) down to 1.2 V. Vishay Siliconix's SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET can be used for load switching in handheld devices such as smart phones, MP3 players, portable media players, digital cameras, eBooks, and tablet PCs. The compact footprint and ultra-thin 0.65 mm maximum profile of the SiB437EDKT 8V P-Channel TrenchFET® Power MOSFET's thermally enhanced Thin PowerPAK® SC-75 package enables smaller, slimmer end products, while its low on-resistance translates into lower conduction losses, saving power and maximizing battery run times in these devices.

Features
  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK®
    • SC-75 Package with ultra-thin 0.6 mm height
    • Small Footprint Area
    • Low On-Resistance
  • 100% Rg Tested
  • Typical ESD Performance 2000 V
  • Built in ESD Protection with Zener Diode
  • Compliant to RoHS Directive 2002/95/EC
Applications
  • Load Switch for Portable Devices
  • Load Switch for Low Voltage Gate Drive
  • Vishay
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)