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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SiA4xxEDJ TrenchFET® Power MOSFET
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Vishay Siliconix SiA4xxEDJ P-Channel TrenchFET® Power MOSFETs

Vishay Siliconix SiA4xxEDJ P-Channel
TrenchFET® Power MOSFETs

Vishay Siliconix's SiA445EDJ and SiA453EDJ are P-Channel TrenchFET® Power MOSFET featuring Thermally Enhanced PowerPAK®. Designed using the SC-70 package with a footprint area of 2.05mm by 2.05mm, SiA445EDJ is 50% smaller than TSOP-6 devices. The slim 0.6mm profile makes SiA445EDJ 40% smaller than TSOP-6 devices. SiA445EDJ and SiA453EDJ offer low on-resistance compared to N-channel down to 11 mΩ and P-channel down to 16mΩ. In addition, SiA445EDJ provides 75% higher maximum power dissipation than devices with on-resistance ratings down to 1.2V. A zener diode in the SiA445EDJ device provides built-in ESD protection with 2000V typical EDS performance. Available in the SC-70 package and 100% Rg tested, SiA445EDJ and SiA453EDJ are well-suited for load, battery, and charger switching in handheld devices including smart phones, tablet PC, and mobile computing.

Additional Resources

Common Features
  • TrenchFET® Power MOSFET
  • Thermally Enhanced PowerPAK®
  • SC-70 Package
    • Small Footprint Area
    • Low On-Resistance
  • 100% Rg Tested
  • Typical ESD Performance: 2000V (SiA445EDJ); 4000V (SiA453EDJ)
  • Smart Phones, Tablet PCs, Mobile Computing
    • Battery Switch
    • Charger Switch
    • Load Switch

Part NumberVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet

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