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Home » NEWEST Products » New by Manufacturer » Vishay » VSMB294x/VSMY2853 Infrared Emitters - Vishay
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Vishay VSMx28x3/VSMx29x3 High-Speed, High-Power Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed,
High-Power Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensities range from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm by 2.3mm by 2.5mm gullwing and reverse gullwing packages, and 2.3mm by 2.55mm by 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi quantum well (VSMB2943, VSMB2948) technologies.

Vishay Semiconductors VSMB2943X01 Infrared Emitters are infrared, 940nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).


Features
  • Package type: surface mount
  • Package form: GW, RGW
  • Dimensions (L x W x H): 2.3 x 2.3 x 2.55mm
  • AEC-Q101 qualified
  • Peak wavelength: λp = 940nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 25º
  • Low forward voltage
  • Suitable for high pulse current operation
  • Terminal configurations: gullwing or reserve gullwing
  • Package matches with detector VEMD2xx3X01 and VEMT2xx3X01 series

Applications
  • IrDA compatible data transmission
  • Miniature light barrier
  • IR touch panels
  • 3D TV
  • Photointerrupters
  • Optical switch
  • Control and drive circuits
  • Shaft encoders
Part Number Package Peak
Emission
Wavelength
Radiant
Intensity
@ 100mA
Angle
of Half
Intensity
Optical
Power
@ 100mA
VF @
100mA
Switching
Times
Datasheet
VSMB2943GX01 Gullwing 940nm 20mW/sr ±25º 40mW 1.35V 15ns
VSMB2943RGX01 Reverse Gullwing 940nm 20mW/sr ±25º 40mW 1.35V 15ns

Vishay Semiconductors VSMB2943SLX01 High-Speed Infrared Emitting Diode is an infrared, 940nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).


Features
  • Package type: surface mount
  • Package form: side view
  • Dimensions (L x W x H): 2.3 x 2.55 x 2.3mm
  • AEC-Q101 qualified
  • Peak wavelength: λp = 940nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 25º
  • Low forward voltage
  • Suitable for high pulse current operation
  • Package matches with detector VEMD2023SLX01 and VEMT2023SLX01

Applications
  • IrDA compatible data transmission
  • Miniature light barrier
  • Photointerrupters
  • Optical switch
  • Remote control
  • IR touch panels

Part Number Package Peak
Emission
Wavelength
Radiant
Intensity
@ 100mA
Angle
of Half
Intensity
Optical
Power
@ 100mA
VF @
100mA
Switching
Times
Datasheet
VSMB2943SLX01 Side View 940nm 20mW/sr ±25º 40mW 1.35V 15ns

Vishay Semiconductors VSMB2948SL High-Speed Infrared Emitting Diode is an infrared, 940nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD).


Features
  • Package type: surface mount
  • Package form: side view
  • Dimensions (L x W x H): 2.3 x 2.55 x 2.3mm
  • Peak wavelength: λp = 940nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 25º
  • Low forward voltage
  • Suitable for high pulse current operation
  • Package matches with detector VEMD2023SLX01 and VEMT2023SLX01

Applications
  • Remote control
  • IR touch panels
Part Number Package Peak
Emission
Wavelength
Radiant
Intensity
@ 100mA
Angle
of Half
Intensity
Optical
Power
@ 100mA
VF @
100mA
Switching
Times
Datasheet
VSMB2948SL Side View 940nm 20mW/sr ±25º 40mW 1.35V 15ns

Vishay Semiconductors VSMY2853 High Speed Infrared Emitting Diodes are infrared, 850nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).


Features
  • Package type: surface mount
  • Package form: GW, RGW
  • Dimensions (L x W x H): 2.3 x 2.3 x 2.55mm
  • Peak wavelength: λp = 850nm
  • High reliability
  • High radiant power
  • Very high radiant intensity
  • Angle of half intensity: ϕ = ± 28º
  • Suitable for high pulse current operation
  • Terminal configurations: gullwing or reverse gullwing
  • Package matches with detector VEMD2503X01 series

Applications
  • IrDA compatible data transmission
  • Miniature light barrier
  • Photointerrupters
  • Optical switch
  • Emitter source for proximity sensors
  • IR touch panels
  • IR illumination
  • 3D TV
Part Number Package Peak
Emission
Wavelength
Radiant
Intensity
@ 100mA
Angle
of Half
Intensity
Optical
Power
@ 100mA
VF @
100mA
Switching
Times
Datasheet
VSMY2853G Gullwing 850nm 35mW/sr ±28º 55mW 1.65V 10ns
VSMY2853RG Reverse Gullwing 850nm 35mW/sr ±28º 55mW 1.65V 10ns

Vishay Semiconductors VSMY2853SL High Speed Infrared Emitting Diode is an infrared, 850nm, side looking emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).


Features
  • Package type: surface mount
  • Package form: side view
  • Dimensions (L x W x H): 2.3 x 2.55 x 2.3mm
  • Peak wavelength: λp = 850nm
  • High reliability
  • High radiant power
  • Very high radiant intensity
  • Angle of half intensity: ϕ = ± 28º
  • Suitable for high pulse current operation
  • Package matches with detector VEMD2xx3SLX01
    and VEMT2xx3SLX01 series

Applications
  • IrDA compatible data transmission
  • Miniature light barrier
  • Photointerrupters
  • Optical switch
  • Emitter source for proximity sensors
  • IR touch panels
  • IR illumination
  • 3D TV
Part Number Package Peak
Emission
Wavelength
Radiant
Intensity
@ 100mA
Angle
of Half
Intensity
Optical
Power
@ 100mA
VF @
100mA
Switching
Times
Datasheet
VSMY2853SL Side View 850nm 35mW/sr ±28º 55mW 1.65V 10ns

Vishay Semiconductors VSMF2893 Series High Speed Infrared Emitting Diodes are infrared, 890nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).


Features
  • Package type: surface mount
  • Package form: GW, RGW, side view
  • Dimensions (L x W x H): 2.3 x 2.3 x 2.55mm
  • AEC-Q101 qualified
  • Peak wavelength: λp = 890nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 25º
  • Low forward voltage
  • Suitable for high pulse current operation
  • VSMF2893RGX01 and VSMF2893GX01 package matches with detector VEMD2xx3X01 and VEMT2xx3X01 series
  • VSMF2893SLX01 package matches with detector VEMD2xx3SSLX01 and VEMT2xx3SLX01 series
  • Floor life: 4 weeks, MSL 2a, acc. J-STD-020

Applications
  • IrDA compatible data transmission
  • 3D TV
  • IR touch panels
  • Miniature light barrier
  • Photointerrupters
  • Optical switches
  • Shaft encoders
  • IR emitter source for proximity applications
Part Number Package Peak
Emission
Wavelength
Radiant
Intensity
@ 100mA
Angle
of Half
Intensity
Optical
Power
@ 100mA
VF @
100mA
Switching
Times
Datasheet
VSMF2893GX01 Gullwing 890nm 20mW/sr ±25º 40mW 1.4V 30ns
VSMF2893RGX01 Reverse Gullwing 890nm 20mW/sr ±25º 40mW 1.4V 30ns
VSMF2893SLX01 Side View 890nm 20mW/sr ±25º 40mW 1.4V 30ns
  • Vishay
  • Optoelectronics|Infrared Data Communications