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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SQ Automotive Power MOSFETs
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Vishay Siliconix SQ Automotive Power MOSFETs


The Vishay Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified power MOSFETs that are produced using a special process design that is optimized for automotive excellence. Featuring low on-resistance N- and P-channel TrenchFET® technologies, Vishay's automotive power MOSFETs are rated for a maximum junction temperature of 175°C. Packages include the TO-262, D2PAK (TO-263), and DPAK as well as several space-saving, small-outline options. For example, the PowerPAK® SO-8L, at 5.13mm by 6.15mm by 1.07mm, is half the size of a DPAK but delivers the same on-resistance, and thermal resistance as low as 1.5°C/W. Even smaller at 3.3mm by 3.3mm by 1.04mm, the PowerPAK 1212-8 delivers similar on-resistance to the SO-8 in about 1/3 the size, with thermal resistance of 2.4°C/W. The SQ series also includes devices in small packages such as the TSOP-6, SOT-23, and tiny 2mm by 2mm SC-70 and PowerPAK SC-70.



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Additional Resources
Learn More about Vishay SQ2361
Learn More about Vishay SQM12N04
SQ Series Selector Guide

Application Note
ThermaSim 3.0 User Guide

Part NumberVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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Part NumberVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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Part NumberVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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Part NumberVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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