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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SIA436DJ N-Channel 8V TrenchFET® MOSFET
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Vishay Siliconix SIA436DJ N-Channel 8V TrenchFET® MOSFET

Vishay Siliconix SIA436DJ N-Channel
8V TrenchFET® MOSFET

Vishay Siliconix's SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in the compact PowerPAK® SC-70 package, and is designed to save valuable PCB space in portable electronics. This MOSFET's on-resistance values are 18 % lower than previous generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2 mm by 2 mm footprint area. This ultra-low on resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ's on resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.

Features
  • Halogen-free According to IEC 61249-2-21 Definition
  • Compact Package
  • Ultra-low RDS(on)
  • TrenchFET® Power MOSFET
  • Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
  • 100 % Rg Tested
  • Compliant to RoHS Directive 2002/95/EC
Applications
  • Load Switch for Portable Applications such as Smart Phones, Tablet PCs and Mobile Computing
  • Low Voltage Gate Drive
  • Low Voltage Drop
  • Power Switch for ICs
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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