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Home » NEWEST Products » New by Manufacturer » Vishay » Vishay Siliconix SIA436DJ N-Channel 8V TrenchFET MOSFET
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Vishay Siliconix SIA436DJ N-Channel 8V TrenchFET® MOSFET

Vishay Siliconix SIA436DJ N-Channel
8V TrenchFET® MOSFET

Vishay Siliconix's SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in the compact PowerPAK® SC-70 package, and is designed to save valuable PCB space in portable electronics. This MOSFET's on-resistance values are 18% lower than previous generation solutions, and up to 64% lower than the closest competing n-channel device in the 2mm by 2mm footprint area. This ultra-low on resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ's on resistance ratings down to 1.2V simplify circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.

Features
  • Halogen-free According to IEC 61249-2-21 Definition
  • Compact Package
  • Ultra-low RDS(on)
  • TrenchFET® Power MOSFET
  • Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
  • 100% Rg Tested
  • Compliant to RoHS Directive 2002/95/EC
Applications
  • Load Switch for Portable Applications such as Smart Phones, Tablet PCs and Mobile Computing
  • Low Voltage Gate Drive
  • Low Voltage Drop
  • Power Switch for ICs
Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistancePd - Power DissipationData Sheet







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