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Home » NEWEST Products » New by Manufacturer » Vishay » VSLB9530S IR 90nm Emitting Diode - Vishay Semiconductors REDIRECTED
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Vishay Semiconductors VSLB9530S Infrared 90nm Emitting Diode

Vishay Semiconductors VSLB9530S Infrared
90nm Emitting Diode

Vishay Semiconductors VSLB9530S Infrared 90nm Emitting Diode is a high-speed device for gesture remote control applications. VSLB9530S offers high radiant power of 40mW at 100mA and is offered in a clear molded, leaded TELUX package with an oval lens designed to support an angle of half intensity of ±18° in the vertical direction and ±36° in the horizontal direction. VSLB9530S is built on GaAIAs multi-quantum well (MQW) technology. This Vishay device's unique angular distribution makes it ideal for gesture remote control of televisions and gaming systems, where it provides excellent spectral matching with silicon photodetectors. The IR emitter's wider angle in the horizontal view helps maintain position flexibility for users, while the narrower angle in the vertical plane focuses the distributed radiant intensity. The infrared emitter released today offers fast switching speeds down to 15ns, low forward voltage down to 1.31V at 150mA, and an operating temperature range from -40°C to +95°C.

  • Package type: leaded
  • Package form: TELUX
  • Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
  • Peak wavelength: λp = 940nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity, vertical: ϕv = ± 18°
  • Angle of half intensity, horizontal: ϕh = ± 36°
  • Low forward voltage
  • Suitable for high pulse current operation
  • High modulation bandwidth: fc = 24MHz
  • Good spectral matching with Si photodetectors
  • Compatible with wave solder processes according to CECC 00802
  • Emitter source for:
    • Gesture recognition applications
    • 3D TV
    • Mid-range proximity detection
    • Object/presence detection

Detail Image
  • Vishay