Contact Mouser (USA)  (800) 346-6873     |     Feedback        
View Cart     |     Change Location  USD
United States United States

Please confirm your currency selection:

US Dollars
Home » NEWEST Products » New by Manufacturer » TriQuint Semiconductor » TriQuint T1Gxx GaN Power Transistors
NEWEST Products
TriQuint T1Gxx GaN HEMT Transistors

TriQuint T1Gxx GaN HEMT Transistors

TriQuint's T1G GaN HEMT Transistors are 5W to 285W (P3dB) discrete GaN transistors on SiC HEMT which operates from DC up to 6GHz. These devices are constructed with TriQuint's proven 0.25um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

T1G2028536-FL & T1G2028536-FS Features
  • Frequency: DC to 2GHz
  • Output power (P3dB): 260W at 1.2GHz
  • Linear gain: 18dB at 1.2GHz
  • Operating voltage: 36V
  • Low thermal resistance package
  • Lead-free and RoHS compliant
T1G3000532-SM Features
  • Frequency: 30MHz to 3.5GHz
  • Output Power (P3dB): 5.7W at 3.0GHz
  • Linear Gain: 15.7dB at 3GHz
  • Typical PAE3dB: 64.7% at 3GHz
  • Operating Voltage: 32V
  • Low thermal resistance package
  • CW and Pulse capable
T1G4003532-FL & T1G4003532-FS Features
  • Frequency: DC to 3.5GHz
  • Output power (P3dB): 37W at 3.5GHz
  • Linear gain: >16dB at 3.5GHz
  • Operating voltage: 32V
  • Low thermal resistance package
  • Lead-free and RoHS compliant
T1G4005528-FS Features
  • Frequency: DC to 3.5GHz
  • Output Power (P3dB): 55W at 3.5GHz
  • Linear Gain: > 15dB at 3.5GHz
  • Operating Voltage: 28V
  • Lead-free and RoHS compliant
T1G4012036-FL & T1G4012036-FS Features
  • Frequency: DC to 3.5GHz
  • Output power (P3dB): 120W peak (24W avg.) at 3.3GHz
  • Linear gain: >15dB at 3.3GHz
  • Operating voltage: 36V
  • Low thermal resistance package
  • Lead-free and RoHS compliant
T1G6000528-Q3 Features
  • Frequency: DC to 6GHz
  • Output Power (P3dB): > 7W at 6GHz
  • Linear Gain: > 10dB at 6GHz
  • Operating Voltage: 28V
  • Low thermal resistance package
  • Lead-free and RoHS compliant
T1G6001032-SM Features
  • Frequency: DC to 6GHz
  • Output power (P3dB): 10W Peak at 3.1GHz
  • Linear gain: >17dB at 3.1GHz
  • Operating voltage: 32V
  • Low thermal resistance package
  • Lead-free and RoHS compliant
T1G6001528-Q3 Features
  • Frequency: DC to 6GHz
  • Output Power (P3dB): 18W at 6GHz
  • Linear Gain: > 10dB at 6GHz
  • Operating Voltage: 28V
  • Low thermal resistance package
  • Lead-free and RoHS compliant
T1G6003028-FL & T1G6003028-FS Features
  • Frequency: DC to 6GHz
  • Output Power (P3dB): 30W at 6GHz
  • Linear Gain: >14dB at 6GHz
  • Operating Voltage: 28V
  • Low thermal resistance package
  • Lead-free and RoHS compliant

Applications
  • Military & Civilian Radar
  • Professional & Military Radio Communications
  • Test Instrumentation
  • Wideband or Narrowband Amplifiers
  • Jammers
  • GPS Communications
  • Avionics
  • Wideband & Narrowband Defense and Commercial Communication Systems
  • General Purpose RF Power
  • Radar
  • WiMAX
  • Cellular Infrastructure

Learn More About All TriQuint GaN Products


Part NumberPackagingVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentFrequencyPd - Power DissipationData Sheet
Loading First Previous Next Last

Sign-Up for New Product Announcements from Mouser
  • TriQuint Semiconductor
  • Military / Aero|Transportation
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)