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Home » NEWEST Products » New by Manufacturer » TriQuint Semiconductor » TGF2160 1600µm Discrete GaAs pHEMT - TriQuint
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TriQuint Semiconductor TGF2160 1600µm Discrete GaAs pHEMT

TriQuint TGF2160 1600µm Discrete GaAs pHEMT

TriQuint Semiconductor TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the TriQuint 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. TriQuint Semiconductor TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.


Features
  • Frequency Range: DC - 20GHz
  • 32.5 dBm Typical Output Power - P1dB
  • 10.4dB Typical Gain @ 12GHz
  • 63% Typical PAE @ 12GHz
  • No Vias
  • Technology: 0.25µm GaAs pHEMT
  • Chip Dimensions: 0.41x0.54x0.10mm
Applications
  • Defense & Aerospace
  • High-Reliability
  • Test and Measurement
  • Commercial
  • Broadband Wireless

Block Diagram

Block Diagram
  • TriQuint Semiconductor