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Home » NEWEST Products » New by Manufacturer » TriQuint Semiconductor » TGF2018/25 Heterojunction Power FETs - TriQuint
NEWEST Products
TriQuint TGF2018/25 High-Efficiency Heterojunction Power FETs

TriQuint TGF2018/25 High-Efficiency
Heterojunction Power FETs

TriQuint's TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB  and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

Features
  • Frequency Range: DC - 20 GHz
  • 22dBm (TGF2018) or 24dBm (TGF2025) Typical Output Power - P1dB
  • 14dB Typical Gain @ 12GHz
  • 55% PAE Typical @ 12GHz
  • 1.0dB (TGF2018) or 0.9dB (TGF2025) Typical NF @ 12GHz
  • No Vias
  • Technology: 0.25um GaAs pHEMT
Applications
  • Aerospace
  • Broadband Wireless
  • Commercial
  • Defense
  • High Reliability
  • Test and Measurement
Functional Block Diagram
Functional Block Diagram
  • TriQuint Semiconductor
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)