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Home » NEWEST Products » New by Manufacturer » Qorvo » TriQuint TGF2080 Discrete GaAs pHEMT
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TriQuint TGF2080 Discrete GaAs pHEMT

TriQuint TGF2080 Discrete GaAs pHEMT

TriQuint TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. TriQuint TGF2080 is designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.

  • Frequency Range: DC - 20 GHz
  • 29.5 dBm Typical Output Power - P1dB
  • 11.5 dB Typical Gain @ 12 GHz
  • 56% Typical PAE @ 12 GHz
  • No Vias
  • Technology: 0.25 um GaAs pHEMT
  • Chip Dimensions: 0.41 x 0.54 x 0.10 mm
  • Defense & Aerospace
  • High-Reliability
  • Test and Measurement
  • Commercial
  • Broadband Wireless
  • TriQuint Semiconductor