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Home » NEWEST Products » New by Manufacturer » TriQuint Semiconductor » TGF2040/60 Discrete GaAs pHEMTs - TriQuint
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TriQuint TGF2040/60 Discrete GaAs pHEMTs

TriQuint TGF2040/60 Discrete GaAs pHEMTs

TriQuint Semiconductor TGF2040 400µm Discrete GaAs pHEMT and TGF2060 600µm Discrete GaAs pHEMT operate from DC to 20GHz and are designed to optimize microwave power and efficiency at high drain bias operating conditions. TGF2040 pHEMT typically provides 26dBm of output power at P1dB with gain of 13dB and 55% power-added efficiency at 1dB compression while TGF2060 typically provides 28dBm of output power at P1dB with gain of 12dB and 55% power-added efficiency at 1dB compression. TriQuint TGF2040 and TGF2060 pHEMTs are appropriate for high efficiency applications. Theses transistors feature a protective overcoat layer with silicon nitride that provides a level of environmental robustness and scratch protection.

TGF2040 Features
  • Frequency Range: DC - 20GHz
  • 26dBm Typical Output Power - P1dB
  • 13dB Typical Gain @ 12GHz
  • 55% Typical PAE @ 12GHz
  • 1.1dB Typical NF @12GHz
  • No Vias
  • Technology: 0.25um GaAs pHEMT
  • Chip Dimensions: 0.41 x 0.34 x 0.10mm
TGF2060 Features
  • Frequency Range: DC - 20GHz
  • 28dBm Typical Output Power - P1dB
  • 12dB Typical Gain @ 12GHz
  • 55% Typical PAE @ 12GHz
  • 1.4dB Typical NF @12GHz
  • No Vias
  • Technology: 0.25um GaAs pHEMT
  • Chip Dimensions: 0.41 x 0.34 x 0.10mm
Applications
  • Defense & Aerospace
  • High-Reliability
  • Test and Measurement
  • Commercial
  • Broadband Wireless

Functional Block Diagram

Functional Block Diagram
  • TriQuint Semiconductor
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)