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Home » NEWEST Products » New by Manufacturer » TriQuint Semiconductor » GaN Solutions - TriQuint
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TriQuint GaN Solutions

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.

TriQuint TGS GaN Switches

TriQuint's TGS Series GaN Switches are single-pole, double-throw (SPDT) packaged switches. They operates from DC up to 18GHz and are designed using TriQuint's 0.25um GaN on SiC production process. These devices typically provide up to 40W input power handling at control voltages of 0/-40V. They maintain low insertion loss of between < 0.8dB to 1.5db and high isolation of -30db to -40dB typical. Each of these are ideally suited for high power switching applications.

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TriQuint T1Gxx GaN HEMT Transistors

TriQuint's T1G GaN HEMT Transistors are 7W to 285W (P3dB) discrete GaN transistors on SiC HEMT which operates from DC up to 6GHz. These devices are constructed with TriQuint's proven 0.25um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

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TriQuint T1Gxx GaN Power Transistors
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TriQuint T2G GaN HEMT Transistors

TriQuint's T2G GaN HEMT Transistors are a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Each device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

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TriQuint T2G GaN HEMT Transistors
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TriQuint TGF2023 GaN HEMT Transistors

TriQuint's TGF2023 GaN HEMT Transistors are a discrete 1.25 to 20mm GaN on SiC HEMT which operates from DC-18 GHz. Each device is designed using TriQuint’s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.

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TriQuint TGF2023 GaN HEMT Transistors
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TriQuint TGA GaN Power Amplifiers

TriQuint's TGA Series GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high power amplifiers designed for military, commercial, satellite communications and radar systems, TriQuint offers GaN-based products meeting today’s market needs and future requirements. Each device uses TriQuint’s 0.25um GaN on SiC technology which provides superior performance while maintaining high reliability. In addition, the use of SiC substrates provides optimum thermal performance necessary for reliable high power operation.

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TriQuint TGA GaN Power Amplifiers
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