STMicroelectronics LETxx RF Power Transistors
STMicroelectronics LETxx RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. The LETxx RF Power Transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0 GHz. These STMicroelectronics LET9x RF Power Transistors are specifically designed for 28 V (cellular base stations) and 32/36 V (avionics) applications. The LETxx RF Power Transistors have a significant improvement in terms of RF performance (+3 dB gain, +15% efficiency), ruggedness and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems and L-band satellite uplink equipment.