STMicroelectronics STAC4932B RF Power Transistors
STMicroelectronics STAC4932B RF power transistors are designed for use in 100 V pulse applications up to 250 MHz. STMicroelectronics STAC4932B RF power transistors feature excellent thermal stability and common source push-pull configuration. These STMicroelectronics N-channel field-effect RF power transistors benefit from highly efficient STAC® (ST Air Cavity) packaging technology.
- Excellent thermal stability
- Common source push-pull configuration
- POUT = 1000W min. (1200W typ.) with 26dB gain @ 123MHz
- Pulse conditions : 1msec - 10%
- In compliance with the 2002/95/EC European directive
- ST air cavity packaging technology - STAC® package