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Home » NEWEST Products » New by Manufacturer » STMicroelectronics » STM STAC4932B RF Power Transistors
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STMicroelectronics STAC4932B RF Power Transistors

STMicroelectronics STAC4932B RF power transistors are designed for use in 100 V pulse applications up to 250 MHz. STMicroelectronics STAC4932B RF power transistors feature excellent thermal stability and common source push-pull configuration. These STMicroelectronics N-channel field-effect RF power transistors benefit from highly efficient STAC® (ST Air Cavity) packaging technology.


Features
  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT = 1000W min. (1200W typ.) with 26dB gain @ 123MHz
  • Pulse conditions : 1msec - 10%
  • In compliance with the 2002/95/EC European directive
  • ST air cavity packaging technology - STAC® package
Applications
  • 100V pulse industrial, scientific, and medical uses up to 250MHz

Additional Resources

Datasheet
STAC4932B Product Info
Pin Configuration Diagram



  • STMicroelectronics
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)|IC-RF