STMicroelectronics MDmesh V Power MOSFETs
STMicroelectronics MDmesh V Power MOSFETs offer the best RDS(on) area on the market. The improvement in RDS(on) achieved with MDmesh V Power MOSFETs significantly reduces losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. STMicroelectronics MDmesh V MOSFETs feature a silicon-based technology that combines an innovative proprietary vertical technology process with STMicroelectronics' PowerMESH horizontal layout. This technology achieves up to 40% better RDS(on) versus the previous MDmesh II technology and establishes a new milestone in the power switch arena.
NEW! The world's lowest RDS(on) in a Power MOSFET is now available from STMicroelectronic with their STY139N65M5, a N-Channel 650V 130A Power MOSFET.
- Industry's best RDS(on) area
- Fast switching
- High VDSS rating
- High dV/dt capability
- Easy to drive
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- SMPS (computers, high efficiency adapters, and telecom)
- Lighting (electronic ballast, HID)
- Displays (TVs, monitors)
- Solar converters