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Home » NEWEST Products » New by Manufacturer » STMicroelectronics » STHV800 High-speed Ultrasound Pulser - STMicroelectronics
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STMicroelectronics STHV800 High-speed Ultrasound Pulser

STMicroelectronics STHV800 High-speed Ultrasound Pulser

STMicroelectronics STHV800 is an octal, monolithic, high-voltage and high-speed pulse generator. It is designed for medical ultrasound applications, but can be used for other piezoelectric, capacitive or MEMS transducers. The device integrates a controller logic interface circuit (compatible with both 1.8V and 3.3V input signals), level translators, MOSFET gate drivers, noise blocking diodes, and high power P-channel and N-channel MOSFETs as the output stage for each channel. These MOSFETs are capable of providing more than 2A of peak output current. In addition, the STHV800 includes self-biasing circuitry which allows very low power consumption during the RX phase (down to 200µW global power dissipation) and thermal shutdown block sensing by an external dedicated pin (THSD). One of the main benefits of the STHV800 is that it requires very few external components: only decoupling capacitors on the HV and LV supplies, and a resistor to pull up the THSD pin.

  • High-density ultrasound transmitter
  • Two independent half-bridges per channel
  • 0 to ±90V output voltage
  • Power-up free
  • Synchronization of the input signals (selectable) by an external clock
  • Up to 20MHz operating frequency
  • Low-power, high-voltage, high-speed drivers
  • 2 independently-supplied half bridges (shorted-option) for each channel, one dedicated to continuous wave (CW) mode
  • Main half bridge:
    • ±2A source and sink current
    • Down to 20ps jitter
    • Low 2nd harmonic distortion
  • CW half bridge:
    • ±0.3A source and sink current
    • Down to 10ps jitter
    • Very low power consumption
  • Fully integrated real clamping-to-ground function
    • 8Ω synchronous active clamp
    • ±2A source and sink current

  • Fully integrated TR switch
    • 8Ω ON resistance
    • Up to 300MHz BW
    • Current consumption down to 10µA in RX phase
    • Receiver multiplexing function
  • 1.8V to 3.6V CMOS logic interface
  • Auxiliary integrated circuits
    • Noise blocking diodes
    • Anti-leakage on output node
    • Fully self-biasing architecture
    • Thermal protection
  • Latch-up free due to HV SOI technology
  • Very few external passive components or supplies needed

  • Medical ultrasound imaging
  • Pulse waveform generator
  • NDT ultrsound transmission
  • Piezoelectric transducer drivers
  • Point-of-care ultrasound imaging equipment

  • STMicroelectronics