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Home » NEWEST Products » New by Manufacturer » STMicroelectronics » MDmesh™ II Power MOSFETs -STM
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STMicroelectronics MDmesh™ II Power MOSFETs

The STMicroelectronics MDmesh™ II Power MOSFETs associates a vertical structure to STM's strip layout to yield one of the industry's lowest levels of on-resistance and gate charge, making it suitable for the most demanding high efficiency converters. These MDmesh™ II Power MOSFETs are fully insulated, have a low profile package with increased creepage path from pin to heatsink plate. They are 100% avalanche tested and feature low input capacitance, gate charge, and gate input resistance.

Features
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

    Applications
    • Switching Applications

    Surface Mount

    Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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    Thru-Hole

    Part NumberPackage / CaseVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceQg - Gate ChargePd - Power DissipationData Sheet








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    • STMicroelectronics
    • Semiconductors