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Home » NEWEST Products » New by Manufacturer » STMicroelectronics » STM STPSC Schottky Silicon-Carbide Diodes
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STMicroelectronics STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC’s superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST’s silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations, and other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4- to 12-amp, through-hole and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

STMicroelectronics STPSC 600V Schottky Silicon-Carbide Diodes are an ultra high performance power Schottky diodes. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Such diodes exhibit no or negligible recovery characteristics. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. STMicroelectronics SiC diodes will boost the performance of PFC operations in hard switching conditions.

Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Particularly suitable in PFC boost diode function

Learn More About STPSC806 600V Power Schottky Silicon Carbide Diode

Part Number Package / Case Forward Continuous Current Peak Reverse Voltage Data Sheet
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STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are an ultra high performance power Schottky diode. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These devices are especially suited for use in PFC applications and they will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
STMicroelectronics STPSC 650 Schottky Silicon-Carbide Diodes
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STMicroelectronics STPSC6H12 1200V Schottky Silicon-Carbide Diode is a high-performance rectifier that is specifically designed to be used in photovoltaic inverters. The STPSC6H12 helps increase the inverter yield by up to 2% thanks to its ability to work at high frequency with low switching losses and ultrafast switching whatever the temperature. The losses generated by SiC diodes are 70% lower compared to bipolar diodes. Their robust periphery improves the whole converter performance against AC line surge voltage. The central lead of the DPAK package is removed to meet the IEC60664 and UL 840 standards requirements for a higher voltage. These characteristics make it the best-in-class 1200V diode.


Features
  • High frequency free-wheel / boost diode
  • Robust high-voltage periphery
  • Ultra fast high voltage switching independent of temperature
STMicroelectronics STPSC6H12 1200V Schottky Silicon-Carbide Diode
Buy STMicroelectronics STPSC6H12 1200V Schottky Silicon-Carbide Diode View Product Detail

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  • STMicroelectronics
  • Semiconductors|Discrete Semiconductors|Diodes & Rectifiers