STMicroelectronics High Speed Trench Gate IGBTs
STMicroelectronics High Speed Trench Gate IGBTs are developed using an advanced proprietary trench gate and field stop structure. These devices represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Typical applications include induction heating. microwave oven, resonant converters, photovoltaic inverters, uninterruptible power supply, welding, power factor correction, very high frequency converters, inverter and motor control.