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Home » NEWEST Products » New by Manufacturer » STMicroelectronics » STM STGW60H65 Field Stop Trench Gate IGBTs
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STMicroelectronics STGW60H65 Field Stop Trench Gate IGBTs

STMicroelectronics STGW60H65
Field Stop Trench Gate IGBTs

STMicroelectronics STGW60H65 Field Stop Trench Gate IGBTs are the first IGBTs feature an advanced proprietary trench gate and field stop structure. An optimized compromise between conduction and switching losses results in maximum efficiency. A very tight parameter distribution and VCE(sat) temperature coefficient slight positive makes it easier to parallel devices. The STGW60H65 comes in three different versions, one without an anti-parallel diode, one with a fast soft recovery, and one with an ultrafast soft recovery.

Features
  • Low losses/high efficiency
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • 6 μs short-circuit withstand time
  • Lead free package
  • Best in class performance in latest trench gate field stop IGBT’s
  • Optimized trade-off between conduction and switching losses.
  • Slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution result in an easy paralleling operation
Applications
  • High power PFC circuits
  • Solar power Inverters
  • High power PSU (Power Supplies)
  • Welding equipment (up to 40KHz)
  • Uninterruptable power supplies
  • Motor controls



Part Number



Package
Collector-
Emitter
Voltage
(V)

Collector
Current
(A)



Feature



Product Info



Datasheet
STGW60H65DF TO-247 650 120 Without anti-parallel diode STGW60H65DF Datasheet
STGW60H65DRF TO-247 650 120 Very fast soft recovery anti-parallel diode STGW60H65DRF Datasheet
STGW60H65F TO-247 650 120 Ultrafast soft recovery anti-parallel diode STGW60H65F
Datasheet
  • STMicroelectronics
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)