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Home » NEWEST Products » New by Manufacturer » STMicroelectronics » STAC RF DMOS Transistors - STM
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STMicroelectronics STAC RF DMOS Transistors

STMicroelectronics STAC RF DMOS Transistors

STMicroelectronics offers a broad portfolio of RF DMOS Power Transistors for applications ranging from 1MHz to 250MHz, such as FM broadcast, industrial, scientific and medical applications. ST offers a broad portfolio of RF DMOS transistors operating from a supply voltage ranging from 28 up to 150V. They feature high peak power (up to 1.2kW) and high ruggedness capability (infinite:1 VSWR). The STAC® air cavity features enhanced thermal behavior, improved RF performance and best-in-class reliability.

STMicroectronics' STAC 50V RF DMOS Transistors are based on an optimized process layout resulting in improved RF performance over the HF and VHF frequency bands, ST’s 50V RF DMOS transistors are ideal for ISM, HF transceivers and FM broadcast applications. They exhibit outstanding RF gain (>20 dB) and power saturation (up to 450 W) combined with high breakdown voltage (up to more than 200 V) and improved ruggedness.

Features
  • Output power: up to 350W
  • High breakdown voltage BVDSS: up to more than 200V
  • Extremely high ruggedness: infinite:1 VSWR all phases
  • Best in-class reliability: 1 million power cycles
  • Low thermal resistance
  • ST air cavity (STAC®) package option for improved junction-to-case thermal resistance (-25%) and improved RF performance 
Applications
  • RF plasma generators
  • Laser drivers
  • RF heating
  • Magnetic resonance imaging (MRI)
  • HF transceivers
  • FM broadcast
Part Number Package / Case Configuration Frequency Drain-Source
Breakdown Voltage
Continuous
Drain Current
Output
Power
Data Sheet








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STMicroelectronics STAC 100/150V RF DMOS Transistors are ideal for industrial, scientific and medical applications. They feature an output power up to 1.2kW and gain and efficiency greater than 20dB and 60% respectively, while keeping the well proven ruggedness (infinite:1 VSWR) and reliability of the 50 V RF DMOS transistors. Another important benefit when using 100/150V supply voltage is the higher optimum load impedance for the device, which means a lower current requirement and consequently reduced IR (dissipation) losses in the entire system.

100/150V
Order STMicroelectronics STAC RF DMOS Transistors View Product List
Features
  • Output power: from 150W up to 1.2kW
  • Supply voltage: 100/150V
  • Gain: >20dB
  • Efficiency: >60%
  • Ruggedness: infinite:1 VSWR all phases
  • Best-in-class reliability
  • Excellent thermal stability
  • ST air cavity (STAC®) package option for improved junction-to-case thermal resistance (-25%) and improved RF performance compared to ceramic packages
Applications
  • RF plasma generators
  • Laser drivers
  • RF heating
  • Magnetic resonance imaging (MRI)
  • HF transceivers
  • FM broadcast
Additional Resources
Learn More About STAC4932B RF Power Transistor
Part Number Package / Case Configuration Frequency Drain-Source Breakdown Voltage Continuous Drain Current Output Power Data Sheet








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  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)